(PDF) VTD34SMH Datasheet - SILICON PHOTODIODE

Número de pieza	VTD34SMH
Descripción	SILICON PHOTODIODE
Fabricantes	Excelitas
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No Preview Available ! SILICON PHOTODIODE VTD34SMH FEATURES • High sensitivity • Low capacitance • Fast response • Low noise • High shunt impedance • Leads configured for surface mount applications PRODUCT DESCRIPTION This P on N photodiode is packaged in a transparent plastic package with the leads configured for surface mounting. These devices are designed to provide excel- lent sensitivity at low levels of irradiance. Linearity is assured by the high shunt imped- ance and low series resistance. Due to their low junction capacitance, these devices exhibit fast response, even with relatively high load resistances. ELECTRO-OPTICAL CHARACTERISTICS @ 25° C PARAMETER SYMBOL MIN. SHORT CIRCUIT CURRENT @ 1000 lux, 2850 K ISC 50 RISE / FALL TIME @ 1 kΩ LOAD, VR = 10 V, 833 nm tR / tF DARK CURRENT @ VR = 10 V ID JUNCTION CAPACITANCE @ 1 MHz, VR = 3 V CJ ACCEPTANCE ANGLE (BETWEEN 50% RESPONSE) θ1/2 ACTIVE AREA A TYP. 70 50 2 25 ±50 7.45 MAX. 30 40 UNITS µA nsec nA pF Degrees mm2 PACKAGE DIMENSIONS inch (mm) RoHS Compliant Spectral Response X Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com 1 page

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PDF VTD34SMH Data sheet ( Hoja de datos )