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FGA60N65SMDのメーカーはFairchild Semiconductorです、この部品の機能は「60A Field Stop IGBT」です。 |
部品番号 | FGA60N65SMD |
| |
部品説明 | 60A Field Stop IGBT | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFGA60N65SMDダウンロード(pdfファイル)リンクがあります。 Total 9 pages
October 2013
FGA60N65SMD
650 V, 60 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
• Fast Switching : EOFF = 7.5 uJ/A
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2011 Fairchild Semiconductor Corporation
FGA60N65SMD Rev. C2
1
C
G
E
Ratings
650
± 20
± 30
120
60
180
60
30
180
600
300
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
http://www.Datasheet4U.com
1 Page Electrical Characteristics of the IGBT (Continued)
Symbol
Parameter
Test Conditions
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
VCE = 400V, IC = 60A,
VGE = 15V
Min.
-
-
-
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
VFM Diode Forward Voltage
Erec Reverse Recovery Energy
trr Diode Reverse Recovery Time
Qrr Diode Reverse Recovery Charge
Test Conditions
IF = 30A
IF =30A,
dIF/dt = 200A/μs
TC = 25oC
TC = 175oC
TC = 175oC
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
Min.
-
-
-
-
-
-
-
Typ.
189
20
91
Max
284
30
137
Typ.
2.1
1.7
127
47
212
87
933
Max
2.6
-
-
-
-
-
-
Unit
nC
nC
nC
Unit
V
uJ
ns
nC
©2011 Fairchild Semiconductor Corporation
FGA60N65SMD Rev. C2
3
www.fairchildsemi.com
3Pages Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
1000
100
td(off)
tf
10
1
0
Common Emitter
VGE = 15V, RG = 3Ω
TC = 25oC
TC = 175oC
30 60 90
Collector Current, IC [A]
120
Figure 15. Load Current Vs. Frequency
120
Vcc = 400 V
Load Current
100 : peak of square wave
Duty cycle : 50%
Tc = 100oC
80 Power Dissipation
Tc = 100oC
: 300W
60
40
20
0
1k 10k 100k 1M
Switching Frequency, f [Hz]
Figure 17. Forward Characteristics
200
100
T = 175oC
C
T = 125oC
C
T = 75oC
C
10
1
01
T = 25oC
C
TC = 175oC
TC = 125oC
TC = 75oC
TC = 25oC
23
Forward Voltage, VF [V]
4
Figure 14. Switching Loss vs..
Collector Current
10
Eon
1
Eoff
0.1
0.01
0
Common Emitter
VGE = 15V, RG = 3Ω
TC = 25oC
TC = 175oC
30 60 90
Collector Current, IC [A]
120
Figure 16. SOA Characteristics
300
100 10μs
100μs
1ms
10 DC 10 ms
1
*Notes:
0.1 1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 18. Reverse Recovery Current
14
12 TC = 25oC
TC = 175oC
10
8
6
4
di/dt = 200A/uS
di/dt =100A/uS
2
0
0 10 20 30 40
Forward Current, IF [A]
©2011 Fairchild Semiconductor Corporation
FGA60N65SMD Rev. C2
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
FGA60N65SMD | 60A Field Stop IGBT | Fairchild Semiconductor |