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PDF SMBT3906DW1 Data sheet ( Hoja de datos )
| Número de pieza | SMBT3906DW1 | |
| Descripción | Dual General Purpose Transistor | |
| Fabricantes | ON Semiconductor | |
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MBT3906DW1,
SMBT3906DW1
Dual General Purpose
Transistor
The MBT3906DW1 device is a spin −off of our popular
SOT−23/SOT−323 three −leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT −363
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low −power surface mount
applications where board space is at a premium.
Features
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO −40 Vdc
Collector −Base Voltage
VCBO −40 Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−200
mAdc
Electrostatic Discharge
ESD
HBM Class 2
MM Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
150 mW
833 °C/W
Junction and Storage
Temperature Range
TJ, Tstg − 55 to +150
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 5
1
http://onsemi.com
SOT−363/SC−88
CASE 419B
STYLE 1
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MARKING DIAGRAM
6
A2 M G
G
1
A2 = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBT3906DW1T1G
MBT3906DW1T2G
Package
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
Shipping†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
SMBT3906DW1T1G SOT−363
3,000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBT3906DW1T1/D
http://www.Datasheet4U.com
1 page  
MBT3906DW1, SMBT3906DW1
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
1.0 +25°C
0.7
- 55°C
0.5
VCE = 1.0 V
0.3
0.2
0.1
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
20 30
50 70 100
200
1.0
0.8
IC = 1.0 mA
0.6
0.4
10 mA
30 mA
TJ = 25°C
100 mA
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
2.0 3.0
5.0 7.0 10
1.0
TJ = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0 2.0 5.0 10
20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
1.0
0.5 qVC FOR VCE(sat)
0
- 0.5
- 1.0
- 1.5 qVB FOR VBE(sat)
+25°C TO +125°C
- 55°C TO +25°C
+25°C TO +125°C
- 55°C TO +25°C
- 2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 16. Temperature Coefficients
http://onsemi.com
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