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PDF VNL5090S5-E Data sheet ( Hoja de datos )

Número de pieza VNL5090S5-E
Descripción fully protected low-side driver
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! VNL5090S5-E Hoja de datos, Descripción, Manual

2
3
2
1
SOT-223
SO-8
Features
Type
VNL5090N3-E
VNL5090S5-E
Vclamp
41 V
RDS(on)
90 mΩ
ID
13 A
Automotive qualified
Drain current: 13 A
ESD protection
Overvoltage clamp
Thermal shutdown
Current and power limitation
Very low standby current
Very low electromagnetic susceptibility
Compliant with European directive 2002/95/EC
Open drain status output (Root part number 2
only)
Specially intended for 2 x R10W or 4 x R5W
automotive signal lamps
VNL5090N3-E
VNL5090S5-E
OMNIFET III
fully protected low-side driver
Datasheet - production data
Description
The VNL5090N3-E and VNL5090S5-E are
monolithic devices made using
STMicroelectronics® VIPower® technology,
intended for driving resistive or inductive loads
with one side connected to the battery. Built-in
thermal shutdown protects the chip from
overtemperature and short-circuit.
Output current limitation protects the devices in
an overload condition. In case of long duration
overload, the device limits the dissipated power to
a safe level up to thermal shutdown
intervention.Thermal shutdown, with automatic
restart, allows the devices to recover normal
operation as soon as a fault condition disappears.
Fast demagnetization of inductive loads is
achieved at turn-off.
Package
SOT-223
SO-8
Table 1. Devices summary
Order codes
Tube
VNL5090N3-E
VNL5090S5-E
Tape and reel
VNL5090N3TR-E
VNL5090S5TR-E
November 2013
This is information on a product in full production.
DocID022568 Rev 6
1/28
www.st.com
http://www.Datasheet4U.com

1 page




VNL5090S5-E pdf
VNL5090N3-E, VNL5090S5-E
Block diagrams and pins configurations
1 Block diagrams and pins configurations
Figure 1. VNL5090N3-E block diagram
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Figure 2. VNL5090S5-E block diagram
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DocID022568 Rev 6
5/28
27

5 Page





VNL5090S5-E arduino
VNL5090N3-E, VNL5090S5-E
Electrical specifications
Symbol
Parameter
Table 13. Switching characteristics(1)
Test conditions
SOT-223(2)
SO-8
Unit
Min. Typ. Max Min. Typ. Max.
td(ON)
Turn-on delay
time
RL = 8.2 Ω,
VCC = 13 V(3)
—8—
— 8 — µs
td(OFF)
Turn-off delay
time
RL = 8.2 Ω,
VCC = 13 V(3)
—3 .4 — — 18 — µs
tr Rise time
RL = 8.2 Ω,
VCC = 13 V(3)
—1 0—
— 10 —
µs
tf Fall time
RL = 8.2 Ω,
VCC = 13 V(3)
—2 .7 — — 10 —
µs
WON
Switching energy RL = 8.2 Ω,
losses at turn-on VCC = 13 V(3)
—5 7—
— 57 — µJ
WOFF
Switching energy
losses at turn-off
RL = 8.2 Ω,
VCC = 13 V(3)
—1 4—
— 55 — µJ
1. See Figure 7: VNL5090N3-E application schematic and Figure 8: VNL5090S5-E application schematic
2. 3.5 V Vsupply = VIN 5.5 V
3. See Figure 6: Switching characteristics
Symbol
Table 14. Protection and diagnostics
Parameter
Test conditions(1)
Min.
Typ. Max.
IlimH
IlimL
tdlimL
DC short-circuit current
Short-circuit current
during thermal cycling
Step response current
limit
VDS = 13 V;
Vsupply = VIN = 5 V
VDS = 13 V; TR < Tj < TTSD;
Vsupply = VIN = 5 V
VDS = 13 V; Vinput = 5 V
TTSD Shutdown temperature
TR(2) Reset temperature
TRS (3)
Thermal reset of
STATUS
THYST
Thermal hysteresis
(TTSD - TR)
1. Vsupply = Vinput in VNL5090N3-E version.
2. Valid for VNL5090S5-E option.
13 18
8A
44
150 175
TRS + 1 TRS + 5
135
25
200
Unit
A
µs
°C
°C
°C
C
DocID022568 Rev 6
11/28
27

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