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G4PC40S の電気的特性と機能

G4PC40SのメーカーはIRFです、この部品の機能は「IRG4PC40S」です。


製品の詳細 ( Datasheet PDF )

部品番号 G4PC40S
部品説明 IRG4PC40S
メーカ IRF
ロゴ IRF ロゴ 




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G4PC40S Datasheet, G4PC40S PDF,ピン配置, 機能
PD 91465B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40S
Standard Speed IGBT
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.32V
@VGE = 15V, IC = 31A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
60
31
120
120
± 20
15
160
65
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
1
12/30/00
http://www.Datasheet4U.com

1 Page





G4PC40S pdf, ピン配列
IRG4PC40S
80
60
Squ are wave:
40 60% of rated
v o ltage
For both:
D u ty cy c le : 5 0 %
TJ = 125°C
Tsink = 90°C
G a te d riv e a s s p e c ifie d
P owe r D is sip atio n = 35 W
Triangular wave:
C la m p v o lta ge :
80% of rated
20
Id e al d io d e s
0
0.1 1 10
f, F requen cy (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
1000
1000
100
TJ = 25°C
10
TJ = 150°C
V GE = 15V
1 20µs PULSE WIDTH A
0.1 1 1 0
VCE , Collector-to-Emitter Volta ge (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150°C
TJ = 25°C
10
V CC = 50V
1 5µs PULSE WIDTH A
5 6 7 8 9 10
VGE, Gate-to-Emitter Volta ge (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


G4PC40S 電子部品, 半導体
IRG4PC40S
30
RG = 10
T J = 150°C
VCC = 480V
VGE = 15V
20
10
1000
VGGE E= 20 V
TJ = 125°C
100
SAFE OPERATING AREA
10
0
0 1 0 2 03 0 4 0 5 06 07
IC, Collector-to-Emitter Current (A)
A
0
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1
1 10 100 1000
VC E , C ollecto r-to -E m itte r V olta ge (V )
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



ページ 合計 : 8 ページ
 
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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