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MJE13005AのメーカーはnELLです、この部品の機能は「Switchmode Series NPN Silicon Power Transistors」です。 |
部品番号 | MJE13005A |
| |
部品説明 | Switchmode Series NPN Silicon Power Transistors | ||
メーカ | nELL | ||
ロゴ | |||
このページの下部にプレビューとMJE13005Aダウンロード(pdfファイル)リンクがあります。 Total 6 pages
SEMICONDUCTOR
MJE13005A(NPN) RRooHHSS
Nell High Power Products
Switchmode Series NPN Silicon Power Transistors
(4A / 400V / 75W)
FEATURES
VCEO(SUS) ≥ 400V @ lC = 10 mA, lB = 0
VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A
Switching time - tf = 0.9 µs (Max.) @ lC = 2 A
700V blocking capability
DESCRIPTION
123
TO-220AB
(MJE13005A)
These devices are designed for high-voltage,
high-speed power switching inductive circuits
where fall time is critical. They are particularly
suited for 115 and 220V SWITCHMODE
applications such as switching regulators,
inverters, motor controls, solenoid/relay drivers
and deflection circuits.
INTERNAL SCHEMATIC DIAGRAM
C (TAB)
(1)
B
(2)
E
(NPN)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VCEV
Collector to base voltage (VBE = 0)
VCEO
Collector to emitter voltage (IB = 0)
VEBO
Emitter to base voltage
IC Collector current - continuous
ICM Peak collector current (Note 1)
IB Base current - continuous
IBM Peak base current (Note 1)
IE Emitter current - continuous
IEM Peak emitter current (Note 1)
Total power dissipation
PD
Derate above 25ºC
TC= 25°C
Tj Junction temperature
Tstg Storage temperature
TL
Maximum lead temperature for soldering purposes:
1/16” from case for ≤ 10 seconds
Note: 1. Pulse test : Pulse width = 5ms, duty cycle ≤ 10%
VALUE
700
400
9
4
8
2
4
6
12
75
0.6
150
-65 to 150
265
UNIT
V
A
W
W/ºC
ºC
ºC
www.nellsemi.com
Page 1 of 6
http://www.Datasheet4U.com
1 Page SEMICONDUCTOR
Fig.1 DC current gain
100
70
50
30
20
TJ = 150°C
25°C
-55°C
10 VCE = 2V
7 VCE = 5V
5
0.04 0.06 0.1
0.2
0.4 0.6 1
2
Collector current, IC (A)
4
Fig.3 VBE - IC characteristics (Typical)
1.3
1.1
VBE(sat) @ lC / lB = 4
VBE(on) @ VCE = 2V
0.9 TJ = -55°C
25°C
0.7
25°C
0.5
150°C
0.3
0.04 0.06 0.1 0.2 0.4 0.6 1
Collector current, lC (A)
2
4
Fig.5 Collector cutoff region
10K
1K
100
10
VCE = 250V
TJ = 150°C
125°C
100°C
75°C
1
0.1
-0.4
50°C
25°C
REVERSE
-0.2 0
FORWARD
0.2 0.4
Base-Emitter voltage, VBE (V)
0.6
MJE13005A(NPN) RRooHHSS
Nell High Power Products
Fig.2 VCE(sat) - IB characteristics (Typical)
2
1.6
lC = 1A
1.2
TJ = 25°C
2A 3A 4A
0.8
0.4
0
0.03 0.05 0.1 0.2 0.3 0.5 0.7 1
Base current, IB (A)
23
Fig.4 VCE(sat) - IC characteristics (Typical)
0.55
0.45
lC / lB = 4
0.35
0.25
25°C
TJ = -55°C
0.15
150°C
0.05
0.04 0.06 0.1
0.2
0.4 0.6 1
2
Collector current, lC (A)
4
Fig.6 Capacitance
2K
1K
700
500
300
200
100
70
50
30
20
0.3
Cib
0.5 1
3 5 10 30
Cob
50 100 300
Reverse voltage, VR (V)
www.nellsemi.com
Page 3 of 6
3Pages SEMICONDUCTOR
MJE13005A(NPN) RRooHHSS
Nell High Power Products
Fig.13 Forward bias power derating
1
0.8
SECOND BREAKDOWN
DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
20 40 60 80 100 120 140 160
Case temperature, TC (°C)
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
123
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
www.nellsemi.com
Page 6 of 6
6 Page | |||
ページ | 合計 : 6 ページ | ||
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