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MJE13005A の電気的特性と機能

MJE13005AのメーカーはnELLです、この部品の機能は「Switchmode Series NPN Silicon Power Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 MJE13005A
部品説明 Switchmode Series NPN Silicon Power Transistors
メーカ nELL
ロゴ nELL ロゴ 




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MJE13005A Datasheet, MJE13005A PDF,ピン配置, 機能
SEMICONDUCTOR
MJE13005A(NPN) RRooHHSS
Nell High Power Products
Switchmode Series NPN Silicon Power Transistors
(4A / 400V / 75W)
FEATURES
VCEO(SUS) 400V @ lC = 10 mA, lB = 0
VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A
Switching time - tf = 0.9 µs (Max.) @ lC = 2 A
700V blocking capability
DESCRIPTION
123
TO-220AB
(MJE13005A)
These devices are designed for high-voltage,
high-speed power switching inductive circuits
where fall time is critical. They are particularly
suited for 115 and 220V SWITCHMODE
applications such as switching regulators,
inverters, motor controls, solenoid/relay drivers
and deflection circuits.
INTERNAL SCHEMATIC DIAGRAM
C (TAB)
(1)
B
(2)
E
(NPN)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VCEV
Collector to base voltage (VBE = 0)
VCEO
Collector to emitter voltage (IB = 0)
VEBO
Emitter to base voltage
IC Collector current - continuous
ICM Peak collector current (Note 1)
IB Base current - continuous
IBM Peak base current (Note 1)
IE Emitter current - continuous
IEM Peak emitter current (Note 1)
Total power dissipation
PD
Derate above 25ºC
TC= 25°C
Tj Junction temperature
Tstg Storage temperature
TL
Maximum lead temperature for soldering purposes:
1/16” from case for ≤ 10 seconds
Note: 1. Pulse test : Pulse width = 5ms, duty cycle 10%
VALUE
700
400
9
4
8
2
4
6
12
75
0.6
150
-65 to 150
265
UNIT
V
A
W
W/ºC
ºC
ºC
www.nellsemi.com
Page 1 of 6
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MJE13005A pdf, ピン配列
SEMICONDUCTOR
Fig.1 DC current gain
100
70
50
30
20
TJ = 150°C
25°C
-55°C
10 VCE = 2V
7 VCE = 5V
5
0.04 0.06 0.1
0.2
0.4 0.6 1
2
Collector current, IC (A)
4
Fig.3 VBE - IC characteristics (Typical)
1.3
1.1
VBE(sat) @ lC / lB = 4
VBE(on) @ VCE = 2V
0.9 TJ = -55°C
25°C
0.7
25°C
0.5
150°C
0.3
0.04 0.06 0.1 0.2 0.4 0.6 1
Collector current, lC (A)
2
4
Fig.5 Collector cutoff region
10K
1K
100
10
VCE = 250V
TJ = 150°C
125°C
100°C
75°C
1
0.1
-0.4
50°C
25°C
REVERSE
-0.2 0
FORWARD
0.2 0.4
Base-Emitter voltage, VBE (V)
0.6
MJE13005A(NPN) RRooHHSS
Nell High Power Products
Fig.2 VCE(sat) - IB characteristics (Typical)
2
1.6
lC = 1A
1.2
TJ = 25°C
2A 3A 4A
0.8
0.4
0
0.03 0.05 0.1 0.2 0.3 0.5 0.7 1
Base current, IB (A)
23
Fig.4 VCE(sat) - IC characteristics (Typical)
0.55
0.45
lC / lB = 4
0.35
0.25
25°C
TJ = -55°C
0.15
150°C
0.05
0.04 0.06 0.1
0.2
0.4 0.6 1
2
Collector current, lC (A)
4
Fig.6 Capacitance
2K
1K
700
500
300
200
100
70
50
30
20
0.3
Cib
0.5 1
3 5 10 30
Cob
50 100 300
Reverse voltage, VR (V)
www.nellsemi.com
Page 3 of 6


3Pages


MJE13005A 電子部品, 半導体
SEMICONDUCTOR
MJE13005A(NPN) RRooHHSS
Nell High Power Products
Fig.13 Forward bias power derating
1
0.8
SECOND BREAKDOWN
DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
20 40 60 80 100 120 140 160
Case temperature, TC (°C)
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
123
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
www.nellsemi.com
Page 6 of 6

6 Page



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