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PDF STD11NM50N Data sheet ( Hoja de datos )
| Número de pieza | STD11NM50N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD11NM50N
STF11NM50N, STP11NM50N
N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP and TO-220
Features
Order codes
STD11NM50N
STF11NM50N
STP11NM50N
VDSS @TJmax
RDS(on)
max
550 V
< 0.47 Ω
ID
8.5 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
DPAK
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STD11NM50N
STF11NM50N
STP11NM50N
Marking
11NM50N
11NM50N
11NM50N
Package
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
November 2010
Doc ID 17156 Rev 3
1/16
www.st.com
16
http://www.Datasheet4U.com
1 page  
STD11NM50N, STF11NM50N, STP11NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 250 V, ID = 4.25 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min. Typ. Max Unit
8 ns
10 ns
--
33 ns
10 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 8.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8.5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 22)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
8.5 A
34 A
1.5 V
230 ns
2.1 µC
18 A
275 ns
2.5 µC
18 A
Doc ID 17156 Rev 3
5/16
5 Page 
STD11NM50N, STF11NM50N, STP11NM50N
Table 9. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 23. TO-220FP drawing
L7
A
B
Dia
L6
H
Package mechanical data
mm
Typ.
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
D
L5
F1 F2
F
G
G1
L2
L3
Doc ID 17156 Rev 3
L4
7012510_Rev_K
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STD11NM50N.PDF ] | |
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