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PDF SCT2120AF Data sheet ( Hoja de datos )
| Número de pieza | SCT2120AF | |
| Descripción | N-channel SiC power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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SCT2120AF
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
650V
120m
29A
165W
Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
Application
・Solar inverters
・DC/DC converters
・Switch mode power supplies
・Induction heating
・Motor drives
Outline
TO220AB
Inner circuit
(2)
(1) Gate
(2) Drain
*1 (3) Source
(1)
*1 Body Diode
(3)
Packaging specifications
Packing
Tube
Reel size (mm)
-
Tape width (mm)
Type
Basic ordering unit (pcs)
-
50
Taping code
-
Marking
SCT2120AF
Absolute maximum ratings (Ta = 25C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Tc = 25C
Tc = 100C
Gate - Source voltage
Power dissipation (Tc = 25C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
PD
Tj
Tstg
Value
650
29
20
72
-6 to 22
165
175
-55 to 175
Unit
V
A
A
A
V
W
C
C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
http://www.Datasheet4U.com
2013.12 - Rev.A
1 page  
SCT2120AF
Electrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
180
160
140
120
100
80
60
40
20
0
0
50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
Operation in
this area is
limited
by RDS(ON)
10
PW = 100s
PW = 1ms
PW = 10ms
1 PW = 100ms
Ta = 25ºC
Single Pulse
0.1
0.1
1 10 100 1000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
0.1
0.01
0.001
0.0001 0.001 0.01
Ta = 25ºC
Single Pulse
0.1 1 10
Pulse Width : PW [s]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5/13
2013.12 - Rev.A
5 Page 
SCT2120AF
Electrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS = 0V
Pulsed
10
Ta = 150ºC
1 Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
Ta = 25ºC
di / dt = 160A / µs
VR = 400V
VGS = 0V
Pulsed
100
0.01
0
12345678
Source - Drain Voltage : VSD [V]
10
1
10 100
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
11/13
2013.12 - Rev.A
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SCT2120AF.PDF ] | |
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