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GKI07301のメーカーはSANKENです、この部品の機能は「N Channel Trench Power MOSFET」です。 |
部品番号 | GKI07301 |
| |
部品説明 | N Channel Trench Power MOSFET | ||
メーカ | SANKEN | ||
ロゴ | |||
このページの下部にプレビューとGKI07301ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
75 V, 26 A, 17.7 mΩ Low RDS(ON)
N ch Trench Power MOSFET
GKI07301
Features
V(BR)DSS --------------------------------- 75 V (ID = 100 µA)
ID ---------------------------------------------------------- 26 A
RDS(ON) -------- 25.5 mΩ max. (VGS = 10 V, ID = 12.4 A)
Qg------- 7.1 nC (VGS = 4.5 V, VDS = 38 V, ID = 15.8 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Package
DFN 5 × 6
8pin
DDDD
8pin
DDDD
SSSG
1pin
GSSS
1pin
Not to scale
Equivalent circuit
D(5)(6)(7)(8)
G(4)
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test conditions
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
VDS
VGS
TC = 25 °C,
ID
with infinite heatsink
TA = 25 °C,
mounted on PCB*
IDM
PW ≤ 100µs
Duty cycle ≤ 1 %
IS
ISM
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 38V, L = 1 mH,
EAS
IAS = 6.8 A, unclamped,
RG = 4.7 Ω,
Refer to Figure 1
IAS
TC = 25 °C,
PD
with infinite heatsink
TA = 25 °C,
mounted on PCB*
TJ
Storage Temperature Range
TSTG
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
S(1)(2)(3)
Rating
75
± 20
26
6
51
26
51
47
13.3
46
3.1
150
− 55 to 150
GKI07301-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
Unit
V
V
A
A
A
A
A
mJ
A
W
W
°C
°C
1
1 Page GKI07301
Test Circuits and Waveforms
VGS
RG
0V
L
ID
VDS
E AS
1
2
L IAS2
V(BR)DSS
V(BR)DSS VDD
VDD
VDS
ID
IAS
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
V(BR)DSS
VDD
RL
RG
VGS
0V
P.W. = 10 μs
Duty cycle ≤ 1 %
VDS
VDD
VGS
VDS
td(on) tr
ton
(a) Test Circuit
Figure 2 Switching Time
td(off) tf
toff
(b) Waveform
90%
10%
90%
10%
VGS
0V
D.U.T.
RG
IF L
VDD
IF
0V
di/dt
trr
IRM × 90 %
IRM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
GKI07301-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
3
3Pages GKI07301
Package Outline
DFN 5 × 6
Sym bol
A
b
C
D
D1
D2
E
E1
E2
e
L
L1
L2
H
I
Min.
1.03
0.34
0.824
4.80
4.11
4.80
5.95
5.65
1.60
0.05
0.38
0.38
3.30
--
1.27
Max.
1.17
0.48
0.970
5.40
4.31
5.00
6.15
5.85
--
0.25
0.50
0.50
3.50
0.18
NOTES:
1) Dimension is in millimeters
2) Pb-free. Device composition compliant with the RoHS directive
Marking Diagram
SK
GKI×××××
YMDDXXXB
Part Number
Lot Number
Y is the Last digit of the year (0 to 9)
M is the Month (1 to 9, O, N or D)
DD is the Date (two digit of 01 to 31)
XXX is the suffix No.
B expresses Pb free pins
GKI07301-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
6
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ GKI07301 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
GKI07301 | N Channel Trench Power MOSFET | SANKEN |