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IRF1324LPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF1324LPBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF1324LPBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97353A
IRF1324SPbF
IRF1324LPbF
HEXFET® Power MOSFET
D VDSS
24V
RDS(on) typ.
1.3mΩ
max.
ID (Silicon Limited)
1.65mΩ
c340A
S ID (Package Limited) 195A
GDS
D2Pak
IRF1324SPbF
GDS
TO-262
IRF1324LPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
kJunction-to-Case
jkJunction-to-Ambient (PCB Mounted, steady-state)
www.irf.com
D
Drain
S
Source
Max.
340
240
195
1420
300
2.0
± 20
0.46
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
°C
270
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.50
40
mJ
A
mJ
Units
°C/W
1
09/24/09
Free Datasheet http://www.Datasheet4U.com
1 Page 10000
1000
≤60µs PULSE WIDTH
Tj = 25°C
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
1
4.0V
0.1
0.1
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
23456789
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
1000
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
IRF1324S/LPbF
10000
≤60µs PULSE WIDTH
Tj = 175°C
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
100
10
0.1
4.0V
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 195A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
12.0
ID= 195A
10.0
VDS= 19V
VDS= 12V
8.0
6.0
4.0
2.0
0.0
0
50 100 150 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
Free Datasheet http://www.Datasheet4U.com
3Pages IRF1324S/LPbF
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
250 ID = 195A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
4.5
4.0
3.5
3.0
2.5
ID = 250µA
ID = 1.0mA
2.0 ID = 1.0A
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
6 www.irf.com
Free Datasheet http://www.Datasheet4U.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF1324LPBF | Power MOSFET ( Transistor ) | International Rectifier |