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PDF 2SC2954 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2954 | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | Renesas | |
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DATA SHEET
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for
low noise wide band amplifier and buffer amplifier of OSC, for VHF
and CATV bnad.
FEATURES
• Low Noise and High Gain.
f = 200 MHz, 500 MHz
NF: 2.3 dB, 2.4 dB
S21e: 20 dB, 12.5 dB
• Large PT in Small Package.
PT: 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
35 V
Collector to Emitter Voltage VCEO
18 V
Emitter to Base Voltage
VEBO
3.0 V
Collector Current
IC 150 mA
Total Power Dissipation
PT*
2.0 W
Termal Resistance
Rth(j-a)*
62.5
°C/W
Junction Temperature
Tj
150 °C
Storage Temperature
Tstg −65 to +150 °C
* With 16 cm2 × 0.7 mm
Ceramic Substrate
hFE Classification
Class
Marking
hFE
QK
QK
30 to 200
PACKAGE DIMENSIONS
(Unit: mm)
4.5±0.1
1.6±0.2
1.5±0.1
ECB
0.42
±0.06
1.5 0.47
±0.06
3.0
0.42±0.06
−0.03
0.41 +0.05
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10034EJ01V0DS (1st edition)
(Previous No. P10405EJ3V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Corporation 1994
NEC Compound Semiconductor Devices 2001
Free Datasheet http://www.Datasheet4U.com
1 page  
S11e, S22e-FREQUENCY
0.09
0.007.413300.008.42
0.41
120
0.10
0.40
110
0.11
0.39
100
0.12 0.13
0.38 0.37
90
0.2
0.14
0.36
80
0.15
0.35
70
0.16
0.34
060
0.303.17 0.302.18
50
ONENT
0.4
0.6
3.0
0.8
1.0
4.0
6.0
0.1
0.2
0.3
0.4
1 GHz
REACTANCE COMPONENT
S11e
( )R
––––
ZO
0.2
0.4
0.1 GHz
0.6
0.8
1.0 GHz
0.1 GHz
S22e
10
20
50
2SC2954
CONDITION VCE = 10 V
IC = 50 mA
f = 0.1 to 1.0 GHz (STEP. 100 MHz)
S21e-FREQUENCY
120°
90°
0.1 GHz
60°
150°
180°
0.2
0.3 30°
0.5
0.7
1.0
5.0 10 15 20 0°
S12e-FREQUENCY
120°
150°
180°
90°
0.1 60°
GHz
0.7
0.5
30°
0.3
0.2
0.1
0.05 0.1 0.15 0.20 0°
−150°
−30°
−120°
−90°
−60°
CONDITION VCE = 10 V
IC = 50 mA
−150°
−30°
−120°
−90°
−60°
CONDITION VCE = 10 V
IC = 50 mA
Data Sheet PU10034EJ01V0DS
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2SC2954.PDF ] | |
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