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Número de pieza | KF13N50P | |
Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | KEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KF13N50P (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 500V, ID= 13A
Drain-Source ON Resistance :
RDS(ON)=0.44 (Max) @VGS = 10V
Qg(typ.) = 35nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KF13N50P KF13N50F
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
13 13*
8 8*
40 40*
860
19.5
4.5
208 49.8
1.66 0.4
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
0.6
62.5
2.51
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF13N50P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF13N50P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF13N50F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
EQUIVALENT CIRCUIT
D
TO-220IS (1)
G
2008. 10. 2
S
Revision No : 1
1/7
Free Datasheet http://www.Datasheet4U.com
1 page KF13N50P/F
Fig12. Transient Thermal Response Curve
(KF13N50P)
100
Duty=0.5
10-1
0.2
0.1
0.05
0.02
10-2 0.01
Single Pulse
10-5 10-4
10-3 10-2
TIME (sec)
PDM
t1
t2
- Rth(j-c) = 0.6 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
Fig13. Transient Thermal Response Curve
(KF13N50F)
100 Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3
10-2
TIME (sec)
PDM
t1
t2
- Rth(j-c) = 2.51 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
2008. 10. 2
Revision No : 1
5/7
Free Datasheet http://www.Datasheet4U.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet KF13N50P.PDF ] |
Número de pieza | Descripción | Fabricantes |
KF13N50F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF13N50P | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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