PDF G4PC40FD Data sheet ( Hoja de datos )

Número de pieza	G4PC40FD
Descripción	IRG4PC40FD
Fabricantes	International Rectifier
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No Preview Available ! PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings G E n-channel Fast CoPack IGBT VCES = 600V VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A TO-247AC VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 49 27 200 200 15 200 ± 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance RθJC RθJC RθCS RθJA Wt Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------ ------ ------ ----- ------ Typ. ------ ------ 0.24 ----- 6 (0.21) Max. 0.77 1.7 ------ 40 ------ Units °C/W g (oz) www.irf.com 1 12/30/00 Free Datasheet http://www.nDatasheet.com 1 page 4000 3000 2000 VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc SHORTED C ies 1000 Coes Cres 0A 1 10 100 VC E , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage IRG4PC40FD 20 VCE = 400V IC = 27A 16 12 8 4 0A 0 20 40 60 80 100 120 Qg , Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.3 VCC = 480V VGE = 15V TJ = 25°C IC = 27A 3.2 3.1 100 RG = 10 Ω VGE = 15V VCC = 480V 10 1 I C = 54A I C = 27A IC = 14A 3.0 0 10 20 A 30 40 50 60 R G, Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 0.1 A -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 Free Datasheet http://www.nDatasheet.com 5 Page

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