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PDF VS-FB190SA10 Data sheet ( Hoja de datos )
| Número de pieza | VS-FB190SA10 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
SOT-227
PRODUCT SUMMARY
VDSS
ID DC
RDS(on)
Type
Package
100 V
190 A
0.0065
Modules - MOSFET
SOT-227
FEATURES
• Fully isolated package
• Very low on-resistance
• Fully avalanche rated
• Dynamic dV/dt rating
• Low drain to case capacitance
• Low internal inductance
• Optimized for SMPS applications
• Easy to use and parallel
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
High current density power MOSFETs are paralleled into a
compact, high power module providing the best
combination of switching, ruggedized design, very low
on-resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately higher than 500 W. The low thermal
resistance and easy connection to the SOT-227 package
contribute to its universal acceptance throughout the
industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous drain current at VGS 10 V
Pulsed drain current
Power dissipation
Linear derating factor
TC = 40 °C
ID
TC = 100 °C
IDM
PD TC = 25 °C
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
VGS
EAS (2)
IAR (1)
EAR (1)
dV/dt (3)
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
TJ, TStg
VISO
M4 screw
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature.
(2) Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A.
(3) ISD 180 A, dI/dt 83 A/μs, VDD V(BR)DSS, TJ 150 °C.
MAX.
190
130
720
568
2.7
± 20
700
180
48
5.7
- 55 to + 150
2.5
1.3
UNITS
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
Nm
Revision: 13-Aug-13
1 Document Number: 93459
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.net/
1 page  
www.vishay.com
1
VS-FB190SA10
Vishay Semiconductors
0.75
0.5
0.1 0.3
0.2
0.1
Single pulse
(thermal resistance)
0.01
0.0001
DC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (s)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
10
15 V
VDS
L
RG
20 V
tp
D.U.T
IAS
0.01 Ω
Driver
+
- VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
1500
1200
ID
TOP
71A
100A
BOTTOM 160A
900
600
300
0
25 50 75 100 125 150
Starting TJ , Junction Temperature( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
V (B R )D S S
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Revision: 13-Aug-13
5 Document Number: 93459
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VS-FB190SA10.PDF ] | |
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