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Datasheet GL5537-1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GL5537-1 | GL5516 - GL5549 Photoresistor | ETC | data |
2 | GL5537-1 | Photoresistor GL55 Series
CdS Photoresistor Manual
GL55 Series Photoresistor
Photoresistor is a resistor which made of semi-conductor material,and the conductance changes with luminance variation .The photoresistor can be manufactured with different figures and illuminated area based on this characteristic.Phot | CdS | data |
3 | GL5537-1 | MINIATURE CADMIUM SULPHIDE PHOTOCONDUCTIVE CELL 晶诚和立
GL5537
MINIATURE CADMIUM SULPHIDE PHOTOCONDUCTIVE CELL
LIGHT DEPENDENT RESISTOR
FEATURES
Miniature open frame package Epoxy coated Moisture resistant Spectral response similar to the human eye ● Applications include dusk-dawn lighting control ● ● ● ●
Dimensions in millime | JCHL | data |
4 | GL5537-1 | Photoresistor GL55 Series
CdS Photoresistor Manual
GL55 Series Photoresistor
Photoresistor is a resistor which made of semi-conductor material,and the conductance changes with luminance variation .The photoresistor can be manufactured with different figures and illuminated area based on this characteristic.Phot | SENBA | data |
GL5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GL513 | TO-18 Type Infrared Emitting Diode GL514/GL513F
GL514/GL513F
s Features
1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ : TYP. ± 7˚ GL513F ∆θ : TYP. ± 50˚ 3. To- 18 type standard package 4. High reliability, long operation life
TO-18 Type Infrared Emitting Sharp Electrionic Components diode | | |
2 | GL513F | TO-18 Type Infrared Emitting Diode GL514/GL513F
GL514/GL513F
s Features
1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ : TYP. ± 7˚ GL513F ∆θ : TYP. ± 50˚ 3. To- 18 type standard package 4. High reliability, long operation life
TO-18 Type Infrared Emitting Sharp Electrionic Components diode | | |
3 | GL514 | TO-18 Type Infrared Emitting Diode GL514/GL513F
GL514/GL513F
s Features
1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ : TYP. ± 7˚ GL513F ∆θ : TYP. ± 50˚ 3. To- 18 type standard package 4. High reliability, long operation life
TO-18 Type Infrared Emitting Sharp Electrionic Components diode | | |
4 | GL527 | 5MM RESIN MOLD TYPE INFRARED LIGHT EMITTING DIODE Sharp Electrionic Components diode | | |
5 | GL528 | 5MM RESIN MOLD TYPE INFRARED LIGHT EMITTING DIODE Sharp Electrionic Components diode | | |
6 | GL533 | High Speed Infrared Emitting Diode for Camera AF (Automatic Focusing) GL533
GL533
s Features
1. Small spot light diameter for easy beam diaphragming (TYP. : φ 0.6 mm) 2. High positional accuracy of optical axis (accuracy : ± 0.1 mm) 3. High output type (radiant flux Φ e : TYP. 13mW) 4. Low peak forward voltage type (peak forward voltage V FM : TYP. 2.0V) 5. PSD* E Sharp Electrionic Components diode | | |
7 | GL537 | 5mm Resin Mold Type Infrared Emitting Diode GL537/GL538
GL537/GL538
s Features
1. High output power I E : TYP. 30mW/sr at I F = 50mA (GL538 ) 2. Beam angle GL538 ∆θ : TYP. ± 13˚ GL537 ∆θ : TYP. ± 25˚ 3. φ 5mm epoxy resin package
φ 5mm Resin Mold Type Infrared Emitting Diode
s Outline Dimensions
MAX.
( Unit : mm )
φ 5
Blue tr Sharp Electrionic Components diode | |
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Número de pieza | Descripción | Fabricantes | |
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