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VSLB9530S の電気的特性と機能

VSLB9530SのメーカーはVishayです、この部品の機能は「High Speed Infrared Emitting Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 VSLB9530S
部品説明 High Speed Infrared Emitting Diode
メーカ Vishay
ロゴ Vishay ロゴ 




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VSLB9530S Datasheet, VSLB9530S PDF,ピン配置, 機能
www.vishay.com
VSLB9530S
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
19232
DESCRIPTION
VSLB59530S, is an infrared, 940 nm emitting diode in
GaAlAs multi-quantum well (MQW) technology with high
radiant power and high speed. It is molded in a clear high
power TELUX package with an oval lens resulting in angle of
half intensities in vertical direction of ± 18° and in horizontal
direction of ± 36°.
FEATURES
• Package type: leaded
• Package form: TELUX
• Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity, vertical: ϕv = ± 18°
• Angle of half intensity, horizontal: ϕh = ± 36°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Compatible with wave solder processes according to
CECC 00802
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Emitter source for gesture recognition applications
• Emitter source for 3D TV
• Emitter source for mid range proximity detection
• Emitter source for object/presence detection
PRODUCT SUMMARY
COMPONENT
VSLB9530S
Ie (mW/sr)
60
ϕv (deg)
± 18
Note
• Test conditions see table “Basic Characteristics“
ϕh (deg)
± 36
λp (nm)
940
tr (ns)
15
ORDERING INFORMATION
ORDERING CODE
VSLB9530S
Note
• MOQ: minimum order quantity
PACKAGING
Tube
REMARKS
MOQ: 2100 pcs, 70 pcs/tube
PACKAGE FORM
TELUX
Rev. 1.1, 03-Sep-13
1 Document Number: 82564
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/

1 Page





VSLB9530S pdf, ピン配列
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
VSLB9530S
Vishay Semiconductors
10
tp = 100 µs
1
0.1
0.01
0.001
0.5
1.0 1.5
VF - Forward Voltage (V)
2.0
Fig. 3 - Forward Current vs. Forward Voltage
150
140
130
120
110
100
90 IF = 150 mA
80
70
60 tp = 20 ms
50
- 50 - 25
0
25 50 75 100
Tamb - Ambient Temperature (°C)
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
1000
tp = 100 µs
100
10
1
0.1
0.001
0.01 0.1
1
IF - Forward Current (A)
10
Fig. 4 - Radiant Intensity vs. Forward Current
1.5
1.4
1.3
IF = 150 mA
1.2
1.1
tp = 20 ms
1.0
- 50 - 25
0
25 50 75 100
Tamb - Ambient Temperature (°C)
Fig. 5 - Forward Voltage vs. Ambient Temperature
100
90
80 IF = 30 mA
70
60
50
40
30
20
10
0
840 880 920 960 1000
21445
λ - Wavelength (nm)
1040
Fig. 7 - Relative Radiant Power vs. Wavelength
0° 10° 20°
vertical
30°
horizontal
1.0
0.9
0.8
0.7
0.6 0.4 0.2 0
vertical
40°
horizontal 50°
60°
70°
80°
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.1, 03-Sep-13
3 Document Number: 82564
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/


3Pages


VSLB9530S 電子部品, 半導体
www.vishay.com
TUBE WITH BAR CODE LABEL DIMENSIONS in millimeters
VSLB9530S
Vishay Semiconductors
Drawing-No.: 9.700-5223.0-4
Rev. 2; Date: 23.08.99
20438
Rev. 1.1, 03-Sep-13
6 Document Number: 82564
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/

6 Page



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部品番号部品説明メーカ
VSLB9530S

High Speed Infrared Emitting Diode

Vishay
Vishay


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