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PDF 2SD1001 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1001 | |
| Descripción | NPN Silicon Epitaxial Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SD1001
Features
World standard miniature package:SOT-89.
High collector-emitter voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector Current (pulse) *
Total power dissipation
Junction temperature
Storage temperature
* Pulse Test PW 10ms, Duty Cycle
50%.
Symbol
VCBO
VCEO
VEBO
IC
IC
PT
Tj
Tstg
Rating
80
80
5
300
500
2.0
150
-55 to +150
Unit
V
V
V
mA
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
hFE Classification
Marking
hFE
EM
90 180
EL
135 270
Symbol
Testconditons
ICBO VCB = 80 V, IE = 0 A
IEBO VEB = 5.0 V, IC = 0 A
VCE = 1.0 V, IC = 50 mA
hFE
VCE = 2.0 V, IC = 300 mA
VCE(sat) IC = 300 mA, IB = 30 mA
VBE(sat) IC = 300 mA, IB = 30 mA
VBE VCE = 6.0 V, IC = 10 mA
fT VCE = 6.0 V, IE = -10 mA
Cob VCB = 6 V, IE = 0, f = 1.0 MHz
EK
200 400
Min Typ Max Unit
100 nA
100 nA
90 200 400
30 80
0.15 0.6 V
0.86 1.2 V
600 645 700 mV
140 MHz
70 pF
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