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Datasheet 2SB1308 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SB1308 | Power Transistor (-50V/ -3A) Transistors
2SB1308 2SD1963
(94S-166-B204)
(94S-342-D204)
290
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The s | ROHM Semiconductor | transistor |
2 | 2SB1308 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1308
FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO:
TRANSISTOR (PNP)
SOT-89
1. BASE
0.5 -3 -30
W (Tamb=25℃) A V
2. COLLECTOR 1 3. EMITTER 2 3
Operating and storage junction | TRANSYS | transistor |
3 | 2SB1308 | Power Transistor SMD Type
Power Transistor 2SB1308
Transistors
Features
Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage | Kexin | transistor |
4 | 2SB1308 | TRANSISTOR 2SB1 308
TRANSISTOR
SOT-89-3L
1. BASE
FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- | Jin Yu Semiconductor | transistor |
5 | 2SB1308-P | PNP Plastic-Encapsulate Transistors MCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
2SB1308-P 2SB1308-Q 2SB1308-R
PNP Plastic-Encapsulate Transistors
Features
• • • • • • •
Lead Free Finish/RoHS Compliant ("P" Suff | MCC | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur Silan Microelectronics transistor | | |
2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th Panasonic Semiconductor transistor | | |
5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | |
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