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PDF 2SA1612 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1612 | |
| Descripción | Transistor | |
| Fabricantes | TY Semiconductor | |
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Product specification
2SA1612
Features
High DC current gain
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
-120
-120
-5
-50
150
150
-55 to +150
Unit
V
V
V
mA
mW
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage *
Base-emitter voltage
Gain bandwidth product
Output capacitance
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
C15
135 270
C16
200 400
Symbol
Testconditons
ICBO VCB = -120V, IE=0
IEBO VEB = -5V, IC=0
VCE = -6V , IC = -1mA
hFE
VCE = -6V , IC = -0.1mA *
VCE(sat) IC = -10mA , IB = -1mA
VBE VCE = -6V , IC = -1mA
fT VCE = -6V , IE = -1mA
Cob VCB = -30V , IE = 0 , f = 1.0MHz
C17
300 600
C18
450 900
Min Typ Max Unit
-50 nA
-50 nA
135 500 900
100 500
-0.09 -0.3 V
-0.55 -0.61 -0.65 V
50 90
MHz
2 3 pF
http://www.twtysemi.com
4008-318-123
1 of 1
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SA1612.PDF ] | |
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