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PDF 2SD2185 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2185 | |
| Descripción | Silicon NPN Epitaxial Planar Type | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD2185
Features
Low collector-emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
hFE Classification
Marking
Rank
hFE
1H
RS
120 240
170 340
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
50
50
5
3
4
1
150
-55 to +150
Unit
V
V
V
A
A
W
Symbol
Testconditons
VCBO IC = 10 ìA, IE = 0
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 20 V, IE = 0
VCE = 2 V, IC = 200 mA
hFE
VCE = 2 V, IC = 1.0 A
VCE(sat) IC = 1 A, IB = 50 mA
VBE(sat) IC = 1 A, IB = 50 mA
fT VCB = 10 V, IE = -50 mA, f = 200 MHz
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
50 V
50 V
5V
0.1 ìA
120 340
80
0.15 0.3 V
0.85 1.2 V
120 MHz
20 35 pF
www.kexin.com.cn 1
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| PDF Descargar | [ Datasheet 2SD2185.PDF ] | |
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