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PDF 2SA1952 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1952 | |
| Descripción | High-speed Switching Transistor (−60V/ −5A) | |
| Fabricantes | ROHM Semiconductor | |
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Transistors
2SA1952
High-speed Switching Transistor (−60V, −5A)
2SA1952
zFeatures
1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A)
2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−100
−60
−5
−5
−10
1
10
150
−55~+150
Unit
V
V
V
A
A(Pulse)
W
W(Tc=25°C)
°C
°C
zExternal dimensions (Units : mm)
2SA1952
5.5 1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SA1952
CPT3
Q
TL
2500
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
Min.
−100
−60
−5
−
−
−
−
−
−
120
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
80
130
−
−
−
Max.
−
−
−
−10
−10
−0.3
−0.5
−1.2
−1.5
270
−
−
0.3
1.5
0.3
Unit
V
V
V
µA
µA
V
V
V
V
−
MHz
pF
µs
µs
µs
Conditions
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −100V
VEB = −5V
IC/IB=−3A/−0.15A
IC/IB=−4A/−0.2A
IC/IB=−3A/−0.15A
IC/IB=−4A/−0.2A
VCE = −2V , IC = −1A
VCE = −10V , IE = 0.5A , f = 30MHz
VCB = −10V , IE = 0A , f = 1MHz
IC = −3A , RL = 10Ω
IB1 = −IB2 = −0.15A
VCC −30V
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SA1952.PDF ] | |
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