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2SA1942のメーカーはToshiba Semiconductorです、この部品の機能は「SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR」です。 |
部品番号 | 2SA1942 |
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部品説明 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SA1942ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1942
Power Amplifier Applications
2SA1942
Unit: mm
• High breakdown voltage: VCEO = −160 V (min)
• Complementary to 2SC5199
• Recommended for 80-W high-fidelity audio frequency amplifier
output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
−160
V
Collector-emitter voltage
V CEO
−160
V
Emitter-base voltage
VEBO −5 V
Collector current
IC −12 A
Base current
IB −1.2 A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
PC 120 W
Tj 150 °C
T stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2012-08-31
1 Page −10
−8
−6
−4
−2
0
0
IC – VCE
−250
−200
−150
Common emitter
Tc = 25°C
−100
−50
−40
−30
−20
IB = −10 mA
−2 −4 −6 −8 −10
Collector-emitter voltage VCE (V)
−3
−1
−0.1
−0.01
−0.01
VCE (sat) – IC
Tc = 100°C
Tc = −25°C
Tc = 25°C
−0.1
−1
Common emitter
IC/IB = 10
−10 −100
Collector current IC (A)
2SA1942
IC – VBE
−10
−8
−6
Tc = 100°C
−4
25°C
−25°C
−2
Common emitter
VCE = −5 V
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage VBE (V)
1000
hFE – IC
Tc = 100°C
Tc = 25°C
100
Tc = −25°C
10
−0.01
Common emitter
VCE = −5 V
−0.1 −1 −10
Collector current IC (A)
Safe Operating Area
−50
−30 IC max (pulsed)*
IC max (continuous)
−10
1 ms*
10 ms*
−5
−3
DC operation
Tc = 25°C
−1
100 ms*
−0.5
−0.3 *: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
−0.1 linearly with increase in
temperature.
−0.05
−2 −3
−10 −30
VCEO max
−100 −300 −1000
Collector-emitter voltage VCE (V)
3
2012-08-31
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ 2SA1942 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SA1940 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | Toshiba Semiconductor |
2SA1940 | SILICON POWER TRANSISTOR | SavantIC |
2SA1940 | POWER TRANSISTOR | Inchange Semiconductor |
2SA1940 | Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PN | New Jersey Semiconductor |