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PDF 2SA1940 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1940 | |
| Descripción | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1940
Power Amplifier Applications
2SA1940
Unit: mm
• Complementary to 2SC5197
• Recommended for 55-W high-fidelity audio frequency amplifier
output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
−120
−120
−5
−8
−0.8
80
150
−55 to 150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −120 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −50 mA, IB = 0
hFE (1)
(Note)
VCE = −5 V, IC = −1 A
hFE (2)
VCE = −5 V, IC = −4 A
VCE (sat)
VBE
fT
Cob
IC = −6 A, IB = −0.6 A
VCE = −5 V, IC = −4 A
VCE = −5 V, IC = −1 A
VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Min
―
―
−120
Typ.
―
―
―
Max
−5.0
−5.0
―
Unit
µA
µA
V
55 ― 160
35 75 ―
― −0.80 −2.0
V
― −0.97 −1.5
V
― 30 ― MHz
― 260 ―
pF
1 2004-07-07
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA1940.PDF ] | |
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