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PDF 2SA1300 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1300 | |
| Descripción | TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1300
Strobe Flash Applications
Medium Power Amplifier Applications
2SA1300
Unit: mm
· High DC current gain and excellent hFE linearity
: hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
· Low saturation voltage: VCE (sat) = −0.5 V (max)
(IC = −2 A, IB = −50 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
-20
-20
-10
-6
-2
-5
-0.2
750
150
-55~150
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = -20 V, IE = 0
IEBO
VEB = -6 V, IC = 0
V (BR) CEO IC = -10 mA, IB = 0
V (BR) EBO IE = -1 mA, IC = 0
hFE (1)
VCE = -1 V, IC = -0.5 A
(Note 2)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = -1 V, IC = -4 A
IC = -2 A, IB = -50 mA
VCE = -1 V, IC = -2 A
VCE = -1 V, IC = -0.5 A
VCB = -10 V, IE = 0, f = 1 MHz
Note 2: hFE (1) classification Y: 140~280, GR: 200~400, BL: 300~600
Min Typ. Max Unit
¾ ¾ -0.1 mA
¾ ¾ -0.1 mA
-10 ¾
¾
V
-6 ¾ ¾
V
140 ¾ 600
60 120 ¾
¾ -0.2 -0.5
V
¾ -0.83 -1.5
V
¾ 140 ¾ MHz
¾ 50 ¾ pF
1 2003-03-24
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1300.PDF ] | |
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