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2SA1298 の電気的特性と機能

2SA1298のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SA1298
部品説明 Silicon PNP Epitaxial Transistor
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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2SA1298 Datasheet, 2SA1298 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1298
Low Frequency Power Amplifier Application
Power Switching Applications
2SA1298
Unit: mm
High DC current gain: hFE = 100~320
Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA)
Suitable for driver stage of small motor
Complementary to 2SC3265
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
30
25
5
800
160
200
150
55~150
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01

1 Page





2SA1298 pdf, ピン配列
2SA1298
3 2007-11-01


3Pages





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