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2SA1259 の電気的特性と機能

2SA1259のメーカーはSanyo Semicon Deviceです、この部品の機能は「PNP/NPN Epitaxial Planar Silicon Darlington Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SA1259
部品説明 PNP/NPN Epitaxial Planar Silicon Darlington Transistors
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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2SA1259 Datasheet, 2SA1259 PDF,ピン配置, 機能
Ordering number:ENN1059D
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SA1259/2SC3145
60V/5A for High-Speed Drivers Applications
Features
· High fT.
· High switching speed.
· Wide ASO.
Package Dimensions
unit:mm
2010C
[2SA1259/2SC3145]
10.2
3.6 5.1
4.5
1.3
1.2
( ) : 2SA1259
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current Pulse
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=(–)40V, IE=0
VEB=(–)5V, IC=0
VCE=(–)2V, IC=(–)2.5A
VCE=(–)5V, IC=(–)2.5A
IC=(–)2.5A, IB=(–)5mA
IC=(–)2.5A, IB=(–)5mA
0.8
123
2.55 2.55
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
Ratings
(–)70
(–)60
(–)5
(–)5
(–)8
1.75
30
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
(–)0.1 mA
(–)3 mA
2000 5000
200 MHz
(–1.0)
0.9
(–)1.5
V
(–)2.0 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73102TN (KT)/71598HA (KT)/63095TS/D251MH/3187KI/2075KI/D222KI 8-4641 No.1059-1/4

1 Page





2SA1259 pdf, ピン配列
2
10000
7
5
3
2
1000
7
5
3
2
23
--10
7
5
hFE -- IC
2SA1259/2SC3145
2SA1259
Tc=25°C
VCE=--2V
2
10000
7
5
3
2
5 7 --0.1 2 3 5 7 --1.0 2 3
Collector Current, IC – A
VCE(sat) -- IC
5 7 --10
ITR03161
2SA1259
Tc=25°C
IC / IB=500
1000
7
5
3
2
100
5 7 0.1
10
7
5
hFE -- IC
2SC3145
Tc=25°C
VCE=2V
2 3 5 7 1.0
2
Collector Current, IC – A
VCE(sat) -- IC
3 5 7 10
ITR03162
2SC3145
Tc=25°C
IC / IB=500
33
22
--1.0
7
5
--0.1
--10
7
5
23
5 7 --1.0
23
Collector Current, IC – A
VBE(sat) -- IC
5 7 --10
ITR03163
2SA1259
Tc=25°C
IC / IB=500
3
2
1.0
7
5
0.1
10
7
5
23
5 7 1.0
23
Collector Current, IC – A
VBE(sat) -- IC
5 7 10
ITR03164
2SC3145
Tc=25°C
IC / IB=500
3
2
--1.0
7
5
--0.1
2
10 ICP
5
IC
3
2
1.0
3 5 7 --1.0
23
Collector Current, IC – A
ASO
5 7 --10
ITR03165
2SA1259
Tc=25°C
5
3
2
0.1
5
3 1ms to 100ms : single pulse
22 3
5 7 10
23
5 7 100
Collector-to-Emitter Voltage, VCE – V ITR03167
1.0
7
5
0.1 2
10 ICP=8A
5
IC=5A
3
2
3 5 7 1.0
23
Collector Current, IC – A
ASO
5 7 10
ITR03166
2SC3145
Tc=25°C
1.0
7
5
3
2
0.1
7
5
1ms to 100ms : single pulse
3
3 5 7 10
23
5 6 7 100
Collector-to-Emitter Voltage, VCE – V ITR03168
No.1059-3/4


3Pages





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