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PDF 2SA1256 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1256 | |
| Descripción | PNP Epitaxial Planar Silicon Transistors | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN1056C
PNP Epitaxial Planar Silicon Transistors
2SA1256
High Frequency Amp Applications
Applications
· Ideally suited for use in FM RF amplifiers, mixers,
oscillators, converters, and IF amplifiers.
Features
· High fT (230MHz typ), and small Cre (1.1pF typ).
· Small NF (2.5dB typ).
Package Dimensions
unit:mm
2018B
[2SA1256]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitace
Base-to-Collector Time Constant
Noise Figure
Voltage Gain
ICBO
IEBO
hFE
fT
Cre
rbb', Cc
NF
PG
* : The 2SA1256 is classified by 1mA hFE as follows :
60 E3 120 90 E4 180 135 E5 180
Note : Marking : E
hFE rank : 3, 4, 5
VCB=(–)10V, IE=0
VEB=(–)4V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
VCB=–6V, f=1MHz
VCE=–6V, IC=–1mA, f=31.9MHz
VCE=–6V, IC=–1mA, f=100MHz
VCE=–6V, IC=–1mA, f=100MHz
NF, PG Test Circuit
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
–30
–20
–5
–30
150
125
–55 to +125
Unit
V
V
V
mA
W
˚C
˚C
Ratings
min typ
60*
150 230
1.1
11
2.5
22
max
–0.1
–0.1
270*
1.7
20
Unit
µA
µA
MHz
pF
ps
dB
dB
L1 : 1mmø plated wire 10mmø 5T, tap : 2T from VBE side
L2 : 1mmø plated wire 10mmø 7T, tap : 1T from VCE side
L3 : 1mmø enamel wire 10mmø 3T
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/40196TS (KOTO) 8-4689/3187AT/D064MW/8182KI, TS No.1056-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA1256.PDF ] | |
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