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2SA1253 の電気的特性と機能

2SA1253のメーカーはSanyo Semicon Deviceです、この部品の機能は「PNP/NPN Epitaxial Planar Silicon Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SA1253
部品説明 PNP/NPN Epitaxial Planar Silicon Transistors
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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2SA1253 Datasheet, 2SA1253 PDF,ピン配置, 機能
Ordering number:ENN1049E
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1253/2SC3135
High-hFE, AF Amp Applications
Features
· High VEBO.
· Wide ASO and high durability against breakdown.
Package Dimensions
unit:mm
2033A
[2SA1253/2SC3135]
4.0 2.2
0.4
0.5
0.4
0.4
( ) : 2SA1253
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE
fT
VCB=(–)40V, IE=0
VEB=(–)10V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
Common Base Output Capacitance
Cob VCB=(–)6V, f=1MHz
* : The 2SA1253/2SC3135 are classified by 1mA hFE as follows :
Rank
R
S
T
U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
123
1.3 1.3
3.0
3.8
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Ratings
(–)60
(–)50
(–)15
(–)200
(–)400
250
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
(–)0.1 µA
(–)0.1 µA
100*
560*
100 MHz
(3.8)
2.5
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73102TN (KT)/71598HA (KT)/3097KI/3135KI/D282KI (KOTO) No.1049-1/4

1 Page





2SA1253 pdf, ピン配列
2SA1253/2SC3135
hFE -- IC
hFE -- IC
1000
1000
2SA1253
2SC3135
7
VCE=--6V
7
VCE=6V
5
Pulse
5
Pulse
33
22
100
7
5
3
2
--0.1 2
1000
7
5
3
2
5 --1.0 2
5 --10 2
Collector Current, IC – mA
fT -- IC
5 --100 2
ITR03097
2SA1253
VCE=--6V
Pulse
100
7
5
3
2
10 7 --1.0
3
2
2 3 5 7 --10
2 3 5 7 --100 2
Collector Current, IC – mA
ITR03099
Cob -- VCB
2SA1253
f=1MHz
100
7
5
3
2
0.1 2
1000
7
5
3
2
5 1.0 2
5 10 2
Collector Current, IC – mA
fT -- IC
5 100 2
ITR03098
2SC3135
VCE=6V
Pulse
100
7
5
3
2
10 7 1.0
3
2
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC – mA
ITR03100
Cob -- VCB
2SC3135
f=1MHz
10
7
5
3
2
1.0 5 7 --1.0
2 3 5 7 --10
2 3 5 7 --100
Collector-to-Base Voltage, VCB -- V ITR03101
VCE(sat) -- IC
3
2SA1253
2 IC / IB=10
--1.0
7
5
3
2
--0.1
7
5
3
--1.0
2 3 5 7 --10 2 3 5 7 --100 2
Collector Current, IC – mA
ITR03103
10
7
5
3
2
1.0 5 7 1.0
2 3 5 7 10
2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR03102
VCE(sat) -- IC
3
2SC3135
2 IC / IB=10
1.0
7
5
3
2
0.1
7
5
3
1.0
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC – mA
ITR03104
No.1049-3/4


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