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PDF 2SA1225 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1225 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SA1225 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1225
Power Amplifier Applications
Driver Stage Amplifier Applications
2SA1225
Unit: mm
• High transition frequency: fT = 100 MHz (typ.)
• Complementary to 2SC2983
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−160
V
Collector-emitter voltage
VCEO
−160
V
Emitter-base voltage
VEBO −5 V
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
IC
IB
PC
−1.5
−0.3
1.0
15
A
A
W
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-7J1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
Weight: 0.36 g (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
1980-09
1 2013-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA1225.PDF ] | |
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