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2SA1204のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Type Transistor」です。 |
部品番号 | 2SA1204 |
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部品説明 | Silicon PNP Epitaxial Type Transistor | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SA1204ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1204
2SA1204
Audio Frequency Amplifier Applications
Unit: mm
• High DC current gain: hFE = 100 to 320
• Suitable for output stage of 1 watts amplifier
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SC2884
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
−35
−30
−5
−800
−160
500
1000
150
−55 to 150
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
V
V
V
mA
mA
mW
°C
°C
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2006-11-09
1 Page −800
−8
−600
−400
−200
IC – VCE
−7 −6 Common emitter
−5 Ta = 25°C
−4
−3
−2
IB = −1 mA
0
0
0 −2 −4 −6 −8
Collector-emitter voltage VCE (V)
2SA1204
1000
500
300
100
50
30
hFE – IC
Ta = 100°C
25
−25
Common emitter
VCE = −1 V
10
−1 −3 −10 −30 −100 −300 −1000
Collector current IC (mA)
−1
Common emitter
−0.5 IC/IB = 25
−0.3
VCE (sat) – IC
Ta = 100°C
−0.1
−0.05
−0.03
25
−25
−0.01
−1
−3 −10 −30 −100 −300
Collector current IC (mA)
−1000
−800
−600
IC – VBE
Common emitter
VCE = −1 V
−400
Ta = 100°C
−200
25
−25
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage VBE (V)
Safe Operating Area
−3000
IC max (pulse)*
10 ms*
−1000 IC max (continuous)
−500
−300
−100
DC operation
Ta = 25°C
100 ms*
1 ms*
−50
−30 *: Single nonrepetitive pulse
Ta = 25°C
−10 Curves must be derated linearly
with increase in temperature. VCEO max
−5 Tested without a substrate.
−3
−0.1
−0.3
−1
−3 −10 −30
Collector-emitter voltage VCE (V)
−100
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3 2006-11-09
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ 2SA1204 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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