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2SA1204 の電気的特性と機能

2SA1204のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Type Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SA1204
部品説明 Silicon PNP Epitaxial Type Transistor
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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2SA1204 Datasheet, 2SA1204 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1204
2SA1204
Audio Frequency Amplifier Applications
Unit: mm
High DC current gain: hFE = 100 to 320
Suitable for output stage of 1 watts amplifier
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SC2884
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
35
30
5
800
160
500
1000
150
55 to 150
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
V
V
V
mA
mA
mW
°C
°C
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2006-11-09

1 Page





2SA1204 pdf, ピン配列
800
8
600
400
200
IC – VCE
7 6 Common emitter
5 Ta = 25°C
4
3
2
IB = −1 mA
0
0
0 2 4 6 8
Collector-emitter voltage VCE (V)
2SA1204
1000
500
300
100
50
30
hFE – IC
Ta = 100°C
25
25
Common emitter
VCE = −1 V
10
1 3 10 30 100 300 1000
Collector current IC (mA)
1
Common emitter
0.5 IC/IB = 25
0.3
VCE (sat) – IC
Ta = 100°C
0.1
0.05
0.03
25
25
0.01
1
3 10 30 100 300
Collector current IC (mA)
1000
800
600
IC – VBE
Common emitter
VCE = −1 V
400
Ta = 100°C
200
25
25
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage VBE (V)
Safe Operating Area
3000
IC max (pulse)*
10 ms*
1000 IC max (continuous)
500
300
100
DC operation
Ta = 25°C
100 ms*
1 ms*
50
30 *: Single nonrepetitive pulse
Ta = 25°C
10 Curves must be derated linearly
with increase in temperature. VCEO max
5 Tested without a substrate.
3
0.1
0.3
1
3 10 30
Collector-emitter voltage VCE (V)
100
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3 2006-11-09


3Pages





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共有リンク

Link :


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