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Datasheet 2SA1201 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA1201 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications Power Amplifier Applications
2SA1201
Unit: mm
• High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package
• PC = 1 to 2 W (mounted on a ceramic subst |  Toshiba Semiconductor | transistor |
| 2 | 2SA1201 | SILICON PNP EPITAXIAL TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SA1201
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications.
FEATURES
*High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounte |  Unisonic Technologies | transistor |
| 3 | 2SA1201 | TRANSISTOR 2SA1 201
TRANSISTOR(PNP)
FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous |  Jin Yu Semiconductor | transistor |
| 4 | 2SA1201 | PNP Silicon Epitaxial Planar Transistor 2SA1201
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
Epitaxial Planar Transistor
SOT-89
FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter
Collector-Base Volt |  SeCoS | transistor |
| 5 | 2SA1201 | Voltage Amplifier Applications SMD Type
Voltage Amplifier Applications 2SA1201
Transistors
Features
High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SC2881
Absolute Maximum Ratings Ta = 25
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Volta |  Kexin | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
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