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Datasheet 2SA1032 PDF ( 特性, スペック, ピン接続図 )

部品番号 2SA1032
部品説明 Silicon PNP Epitaxial
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 
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2SA1032 Datasheet, 2SA1032 PDF,ピン配置, 機能
2SA1031, 2SA1032
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SC458 (LG) and 2SC2310
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base

1 Page



2SA1032 pdf, ピン配列
2SA1031, 2SA1032
Electrical Characteristics (Ta = 25°C)
2SA1031
2SA1032
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–30 —
–55 —
—V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–30 —
–50 —
—V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
–5
–5
—V
IE = –10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
I CBO
I EBO
hFE*1
Base to emitter voltage VBE
Collector to emitter
saturation voltage
VCE(sat)
Gain bandwidth product fT
Collector output
capacitance
Cob
— — –0.5 — — –0.5 µA VCB = –18 V, IE = 0
— — –0.5 — — –0.5 µA VEB = –2 V, IC = 0
100 — 500 100 — 320
VCE = –12 V,
IC = –2 mA
— — –0.8 — — –0.8 V
VCE = –12 V,
IC = –2 mA
— — –0.2 — — –0.2 V
IC = –10 mA,
IB = –1 mA
200 280 —
200 280 —
MHz VCE = –12 V,
IC = –2 mA
— 3.3 4.0 — 3.3 4.0 pF VCB = –10 V, IE = 0,
f = 1 MHz
Noise figure
NF
——5
——5
dB VCE = –6 V,
IC = –0.1 mA,
Rg = 500 ,
f = 120 Hz
Note: 1. The 2SA1031 and 2SA1032 are grouped by hFE as follows.
B CD
2SA1031 100 to 200 160 to 320 250 to 500
2SA1032 100 to 200 160 to 320 —
3


3Pages


2SA1032 電子部品, 半導体
4.8 ± 0.3
3.8 ± 0.3
Unit: mm
0.60 Max
0.5 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g

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