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PDF 2SA1010 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1010 | |
| Descripción | SILICON POWER TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
Total power dissipation
IB(DC)
PT (Tc = 25 °C)
Total power dissipation
PT (Ta = 25 °C)
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 300 µs, duty cycle ≤ 10%
Ratings
−100
−100
−7.0
−7.0
−15
−3.5
40
1.5
150
−55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Pin Connection
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1 page  
[MEMO]
2SA1010
Data Sheet D16118EJ2V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SA1010.PDF ] | |
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