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2SA0885のメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Transistor」です。 |
部品番号 | 2SA0885 |
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部品説明 | Silicon PNP Epitaxial Transistor | ||
メーカ | Panasonic Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SA0885ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1846
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
■ Features
• Output of 3 W can be obtained by a complementary pair with
2SC1846
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
−45
−35
−5
−1
−1.5
1.2
5.0 *
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) *: With a 100 × 100 × 2 mm Al heat sink
Unit
V
V
V
A
A
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1 1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE1 *
hFE2
VCE(sat)
fT
Cob
Conditions
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −20 V, IE = 0
VCE = −20 V, IB = 0
VEB = −5 V, IC = 0
VCE = −10 V, IC = −500 mA
VCE = −5 V, IC = −1 A
IC = −500 mA, IB = −50 mA
VCE = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min
−45
−35
85
50
Typ Max
− 0.1
−100
−10
340
− 0.5
200
20 30
Unit
V
V
µA
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240 170 to 340
Publication date: February 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00002BED
1
1 Page ICEO Ta
104
VCE=–10V
103
102
Safe operation area
–10 Single pulse
TC=25˚C
ICP
–1
IC
t=10ms
t=1s
–0.1
10 –0.01
1
0 40 80 120 160
Ambient temperature Ta (°C)
–0.001
–0.1 –1 –10 –100
Collector-emitter voltage VCE (V)
2SA0885
SJD00002BED
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ 2SA0885 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SA0885 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |
2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) | Panasonic Semiconductor |