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PDF MJE13007 Data sheet ( Hoja de datos )

Número de pieza MJE13007
Descripción SILICON POWER TRANSISTOR
Fabricantes Comset Semiconductors　
Logotipo Comset Semiconductors Logotipo

MJE13007 datasheet


1. 80W NPN - On semi






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SEMICONDUCTORS
MJE13007
SILICON POWER TRANSISTORS
NPN power transistors in a TO-220 package. They are intended for high voltage, high speed power
switching inductive circuits where fall time is critical. They are particularly suited for 115V and 220V
SWITCHMODE applications such as switching regulator’s, inverters, motor controls, solenoid/relay
drivers and deflection circuits.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
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ICM Collector Peak Current (*)
IB Base Current
IBM Base Peak Current (*)
IE Emitter Current
IEM Emitter Peak Current (*)
PT Power Dissipation at Case Temperature
tJ Junction Temperature
ts Storage Temperature range
(*)Pulse Width = 5ms, duty cycle <10%.
Value
@ Tmb < 25°
400
700
9
8
16
4
8
12
24
80
150
-65 to +150
Unit
V
V
V
A
A
A
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
1.56
62.5
Unit
°C/W
02/10/2012
COMSET SEMICONDUCTORS
1/3
datasheet pdf - http://www.DataSheet4U.net/

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