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PDF BUZ31 Data sheet ( Hoja de datos )
| Número de pieza | BUZ31 | |
| Descripción | Power MOS Transistors | |
| Fabricantes | Comset Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ31 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SEMICONDUCTORS
BUZ31
POWER MOS TRANSISTORS
FEATURE
• Nchannel
• Enhancement mode
• Avalanche-rated
• TO-220 envelope
• Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
IDS
IDM
IAR
EAR
EAS
VGS
RDS(on)
PT
tJ
tstg
Ratings
http://www.DataSheet4U.net/
Drain-Source Voltage
Continuous Drain Current TC= 37°C
Pulsed Drain Current TC= 25°C
Avalanche Current, Limited by Tjmax
Avalanche Energy, Periodic Limited by Tjmax
Avalanche Energy, Single pulse
ID = 14.5 A, VDD = 50 V, RGS = 25 Ω
L = 1.42 mH, Tj = 25°C
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature TC= 25°C
Operating Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
Thermal Resistance, chip case
Thermal Resistance, chip to ambient
Value
200
14.5
58
14.5
9
200
20
0.2
95
-55 to +150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
Value
<1.32
<75
Unit
K/W
01/10/2012
COMSET SEMICONDUCTORS
1/3
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BUZ31.PDF ] | |
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