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Número de pieza | 2N5199 | |
Descripción | Monolithic N-Channel JFET Duals | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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No Preview Available ! 2N5196/5197/5198/5199
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
2N5196
2N5197
2N5198
2N5199
VGS(off) (V)
–0.7 to –4
–0.7 to –4
–0.7 to –4
–0.7 to –4
V(BR)GSS Min (V)
–50
–50
–50
–50
gfs Min (mS)
1
1
1
1
IG Max (pA)
–15
–15
–15
–15
jVGS1 – VGS2j Max (mV)
5
5
10
15
FEATURES
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 5 pA
D Low Noise
D High CMRR: 100 dB
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
APPLICATIONS
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High Speed Comparators
D Impedance Converters
DESCRIPTION
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with IG guaranteed at VDG = 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-71
S1
1
D1 2
G2
6
5 D2
ABSOLUTE MAXIMUM RATINGS
3
G1
4
Top View
S2
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 85_C
b. Derate 4 mW/_C above 85_C
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1 page 2N5196/5197/5198/5199
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
5
VGS(off) = –2 V
VDS = 20 V
Gate-Source Differential Voltage
vs. Drain Current
100
VDG = 20 V
TA = 25_C
4
3 TA = –55_C
25_C
2
2N5199
10
2N5196
1 125_C
0
0
–0.5
–1.0
–1.5
–2.0
VGS – Gate-Source Voltage (V)
–2.5
Voltage Differential with Temperature
vs. Drain Current
100
VDG = 20 V
DTA = 25 to 125_C
DTA = –55 to 25_C
2N5199
10
2N5196
1
0.01
0.1
ID – Drain Current (mA)
1
Circuit Voltage Gain vs. Drain Current
100
1
0.01
0.1
ID – Drain Current (mA)
Common Mode Rejection Ratio
vs. Drain Current
130
CMRR = 20 log
DVDG
120 D VGS1 – VGS2
110
DVDG = 10 – 20 V
100
5 – 10 V
90
1
80
0.01
1k
0.1
ID – Drain Current (mA)
On-Resistance vs. Drain Current
1
80
60
VGS(off) = –3 V
40
AV + 1
gfs RL
) RLgos
VGS(off) = –2 V
20 Assume VDD = 15 V, VDS = 5 V
RL
+
10 V
ID
0
0.01
0.1
1
ID – Drain Current (mA)
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
800
600
400
200
0
0.01
VGS(off) = –2 V
VGS(off) = –3 V
0.1
ID – Drain Current (mA)
1
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8-5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2N5199.PDF ] |
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