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PDF TGA2525 Data sheet ( Hoja de datos )
| Número de pieza | TGA2525 | |
| Descripción | 2-18 GHz Low Noise Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TGA2525 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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TGA2525
2-18 GHz Low Noise Amplifier with AGC
Key Features
• Frequency Range: 2 - 18 GHz
• Midband NF: 2 dB
• Gain: 17 dB
• >30 dB adjustable gain with Vg2
• TOI: 29 dBm Typical
• 22 dBm Nominal Psat, 18 dBm Nominal P1dB
• ESD Protection circuitry on Vg1 & Vg2
• Bias: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V, Vg2
= +1.3 V, Typical
• Technology: 3MI 0.15 um Power pHEMT
• Chip Dimensions: 2.09 x 1.35 x 0.1 mm
Measured Performance
Bias conditions: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V,
Vg2 = +1.3 V Typical
10 20
Primary Applications
• Wideband Gain Block / LNA
• X-Ku Point to Point Radio
• Electronic Warfare Applications
9 18 Product Description
8 16
7
6
NF
Gain
14
12
The TriQuint TGA2525 is a compact LNA Gain
Blockwww.DataSheet.net/ MMIC with adjustable gain control (AGC).
The LNA operates from 2-18 GHz and is designed
5 10
using TriQuint’s proven standard 0.15 um Power
4 8 pHEMT production process.
36
24
12
00
2 4 6 8 10 12 14 16 18
Frequency (GHz)
25
20
15
10 Gain
5
0 IRL
-5 ORL
-10
-15
-20
-25
-30
-35
The TGA2525 provides a nominal 18 dBm of
output power at 1 dB gain compression with a
small signal gain of 17 dB. Greater than 30 dB
adjustable gain can be achieved using Vg2 pin.
Typical noise figure is 2 dB at 8 GHz. Special
circuitry on both Vg1 and Vg2 pins provides ESD
protection.
The TGA2525 is suitable for a variety of wideband
systems such as point to point radios, radar
warning receivers and electronic counter
measures.
The TGA2525 is 100% DC and RF tested on-wafer
to ensure performance compliance. The TGA2525
has a protective surface passivation layer providing
environmental robustness.
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Lead-Free & RoHS compliant.
Evaluation Boards are available upon request.
Datasheet subject to change without notice.
1
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
October 2008 © Rev D
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Measured Data
TGA2525
Bias conditions: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V, Vg2 = +1.3 V Typical
25
20
15
10
5
0
2 4 6 8 10 12 14 16 18 20 22 24
Frequency (GHz)
www.DataSheet.net/
0
-10
-20
IRL
-30
ORL
-40
2 4 6 8 10 12 14 16 18 20 22 24
Frequency (GHz)
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
October 2008 © Rev D
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
TGA2525
Recommended Assembly Diagram
Vg2 Vd
0.01 uF
0.01 uF
100 pF 100 pF
RF In
www.DataSheet.net/
100 pF
0.01 uF
RF Out
Vg1
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
October 2008 © Rev D
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA2525.PDF ] | |
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