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PDF SCS222DSTL Data sheet ( Hoja de datos )
| Número de pieza | SCS222DSTL | |
| Descripción | Switching Diode | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
SCS222DSTL
0.1A , 80V
Plastic-Encapsulated Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Epitaxial planar Silicon diode
WBFBP-03D
DE
FEATURES
High speed. (TRR=1.5ns Typ.)
Suitable for high packing density layout
High reliability.
APPLICATIONS
Ultra high speed switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING
N
PACKAGE INFORMATION
Package
MPQ
WBFBP-03D
5K
Leader Size
7 inch
www.DataSheet.co.kr
LC
D
BH
F
AK
J
G
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
0.950 1.050
0.950 1.050
0.010 0.070
0.210 0.310
0.350 REF.
0.680 REF.
REF.
G
H
J
K
L
Millimeter
Min. Max.
- 0.050
0.510 0.610
0.250 0.350
- 0.050
0.450 0.550
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameters
Symbol
Rating
Peak Repetitive Reverse Voltage
DC Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Power Dissipation
Operating Junction and Storage Temperature
VRM
VR
IFM
IO
PD
TJ,TSTG
80
80
300
100
100
150, -65~150
Unit
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Reverse breakdown voltage
V(BR)
80
-
Maximum DC Reverse Current at rated
DC blocking voltage
IR
-
0.1
Forward Voltage
VF -
1.2
Diode Capacitance
CD -
3.5
Maximum Reverse Recovery Time
TRR
-
4
Unit Test Conditions
V IR=100µA
µA VR=70V
V IF=100mA
pF VR=6V, f=1MHz
nS VR=6V, IF=5mA
http://www.SeCoSGmbH.com/
21-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
Datasheet pdf - http://www.DataSheet4U.net/
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