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2SC4093-T2 の電気的特性と機能

2SC4093-T2のメーカーはNECです、この部品の機能は「MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SC4093-T2
部品説明 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
メーカ NEC
ロゴ NEC ロゴ 




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2SC4093-T2 Datasheet, 2SC4093-T2 PDF,ピン配置, 機能
DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC4093
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteritics, and is
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
• Low Noise
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gains
S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC4093-T1
3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side
of the tape.
2SC4093-T2
3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 100
Total Power Dissipation
PT
200
Junction Temperature
Storage Temperature
Tj 150
Tstg 65 to +150
V
V
V
mA
mW
C
C
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
0.3
1.5
+0.2
0.1
5° 5°
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
© 1991

1 Page





2SC4093-T2 pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
200
100
0 50 100 150
TA-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
0.5
1 5 10
IC-Collector Current-mA
50
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
20
VCE = 10 V
10
5
2
1
0.6
12
5 10 20 40
IC-Collector Current-mA
2SC4093
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 GHz
2
1
0.5
0.2
0.1
1
20
2 5 10 20
VCB-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
f = 1.0 GHz
10
0
0.5 1 2
5 10 20
IC-Collector Current-mA
50
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
30
VCE = 10 V
IC = 20 mA
Gmax
20
|S21e|2
10
0
0.1 0.2
0.5 1.0
f-Frequency-GHz
2.0
3


3Pages


2SC4093-T2 電子部品, 半導体
[MEMO]
2SC4093
6

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
2SC4093-T1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

NEC
NEC
2SC4093-T2

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

NEC
NEC


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