DataSheet.jp

2SC4080 の電気的特性と機能

2SC4080のメーカーはSanyo Semicon Deviceです、この部品の機能は「PNP/NPN Epitaxial Planar Silicon Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SC4080
部品説明 PNP/NPN Epitaxial Planar Silicon Transistors
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




このページの下部にプレビューと2SC4080ダウンロード(pdfファイル)リンクがあります。

Total 2 pages

No Preview Available !

2SC4080 Datasheet, 2SC4080 PDF,ピン配置, 機能
Ordering number:EN3171
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1575/2SC4080
High-Frequency Amplifier,
Wide-Band Amplifier Applications
Features
· High fT.
· High breakdown voltage.
· Small reverse transfer capacitance and excellent
high-frequency characteristic.
· Adoption of FBET process.
Package Dimensions
unit:mm
2038
[2SA1575/2SC4080]
E : Emitter
C : Collector
B : Base
( ) : 2SA1575
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)150V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)10V, IC=(–)60mA
VCE=(–)30V, IC=(–)30mA
VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)100µA, IC=0
* : The 2SA1575/2SC4080 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
Marking 2SA1575 : AF
2SC4080 : CI
hFE rank : C, D, E, F
SANYO : PCP
(Bottom view)
Ratings
(–)200
(–)200
(–)4
(–)100
(–)200
500
1.3
150
–55 to +150
Unit
V
V
V
mA
mA
mW
W
˚C
˚C
Ratings
min typ
40*
20
400
1.8
(2.3)
1.4
(1.7)
(–)200
(–)200
(–)4
max
(–)0.1
(–)1.0
320*
(–)1.0
(–)1.0
Unit
µA
µA
MHz
pF
pF
pF
pF
V
V
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72098HA (KT)/7139MO, TS No.3171-1/2

1 Page







ページ 合計 : 2 ページ
 
PDF
ダウンロード
[ 2SC4080 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
2SC4080

PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device
Sanyo Semicon Device
2SC4080

NPN Epitaxial Planar Silicon Transistors

Guangdong Kexin
Guangdong Kexin
2SC4081

General purpose transistor

ROHM Semiconductor
ROHM Semiconductor
2SC4081

Silicon Epitaxial Planar Transistor

Galaxy Microelectronics
Galaxy Microelectronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap