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PDF C1318 Data sheet ( Hoja de datos )
| Número de pieza | C1318 | |
| Descripción | NPN Transistor - 2SC1318 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
I Features
• Low collector to emitter saturation voltage VCE(sat)
• Complementary pair with 2SA719 and 2SA720
5.0±0.2
0.7±0.1
Unit: mm
4.0±0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to
base voltage
2SC1317
2SC1318
VCBO
30
60
Collector to
2SC1317
emitter voltage 2SC1318
VCEO
25
50
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
ICP
IC
PC
Tj
Tstg
7
1
500
625
150
−55 to +150
Unit
V
V
V
A
mA
mW
°C
° Cwww.DataSheet.co.kr
0.45+–00..115
(1.27)
(1.27)
0.45+–00..115
123
2.54±0.15
1: Emitter
2: Collector
3: Base
TO-92 Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Collector to
base voltage
2SC1317
2SC1318
ICBO
VCBO
VCB = 20 V, IE = 0
IC = 10 µA, IE = 0
Collector to
emitter voltage
2SC1317
2SC1318
VCEO
IC = 10 mA, IB = 0
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Base to emitter saturation voltage *1
Transition frequency
Collector output capacitance
VEBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IE = 10 µA, IC = 0
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
IC = 300 mA, IB = 30 mA
IC = 300 mA, IB = 30 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1 85 to 170 120 to 240 170 to 340
Min
30
60
25
50
7
85
40
Typ Max
0.1
340
0.35 0.6
1.1 1.5
200
6 15
Unit
µA
V
V
V
V
V
MHz
pF
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C1318.PDF ] | |
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