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VT4045BP の電気的特性と機能

VT4045BPのメーカーはVishayです、この部品の機能は「Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VT4045BP
部品説明 Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VT4045BP Datasheet, VT4045BP PDF,ピン配置, 機能
www.vishay.com
VT4045BP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
TMBS®
TO-220AC
PIN 1
PIN 2
2
1
CASE
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2011/65/EU
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTCS
IF(DC)
VRRM
IFSM
VF at IF = 40 A
TOP max. (AC mode)
TJ max. (DC forward current)
40 A
45 V
240 A
0.51 V
150 °C
200 °C
MECHANICAL DATA
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
www.DataSheet.co.kr
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(DC) (1)
IFSM
Operating junction temperature range (AC mode)
Junction temperature in DC forward current
without reverse bias, t 1 h
TOP
TJ (2)
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test
VT4045BP
45
40
240
- 40 to + 150
200
UNIT
V
A
A
°C
°C
Revision: 23-Feb-12
1 Document Number: 89441
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





VT4045BP pdf, ピン配列
www.vishay.com
100
TA = 150 °C
TA = 125 °C
10 TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20
40
60 80 100
Percent of Rated Peak reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
100 000
10 000
TJ = 25 °C
f = 1.0 MHz
Vstg = 50 mVp-p
VT4045BP
Vishay General Semiconductor
1
0.1
0.01
0.1
1
10 100
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
1000
www.DataSheet.co.kr
100
0.1
1
10 100
Reverse Voltage (V)
Fig. 4 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.415 (10.54)MAX.
0.370 (9.40)
0.360 (9.14)
TO-220AC
0.154 (3.91)DIA.
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.160 (4.06)
0.140 (3.56)
PIN
12
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 2
0.560 (14.22)
0.530 (13.46)
CASE
0.037 (0.94)
0.027(0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
Revision: 23-Feb-12
3 Document Number: 89441
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


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共有リンク

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部品番号部品説明メーカ
VT4045BP

Trench MOS Barrier Schottky Rectifier

Vishay
Vishay
VT4045BP-M3

Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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