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GWM120-0075X1 の電気的特性と機能

GWM120-0075X1のメーカーはIXYS Corporationです、この部品の機能は「Three phase full Bridge」です。


製品の詳細 ( Datasheet PDF )

部品番号 GWM120-0075X1
部品説明 Three phase full Bridge
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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GWM120-0075X1 Datasheet, GWM120-0075X1 PDF,ピン配置, 機能
www.DataSheet.co.kr
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 120-0075X1
VDSS = 75 V
ID25 = 110 A
RDSon typ. = 4.0 mW
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TVJ = 25°C to 150°C
ID25 TC = 25°C
ID90 TC = 90°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
Maximum Ratings
75 V
± 20 V
110 A
85 A
110 A
80 A
Symbol
RDSon
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
RthJC
RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
on chip level at
VGS = 10 V; ID = 60 A
VDS = 20 V; ID = 1 mA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
VGS = 10 V; VDS = 36 V; ID = 25 A
VGS = 10 V; VDS = 30 V
ID = 80 A; RG = 39
inductive load
TVJ = 125°C
with heat transfer paste (IXYS test setup)
4.0
7.2
2
0.1
115
30
30
130
100
500
100
0.20
0.50
0.01
1.3
4.9 mW
8.4 mW
4V
1 µA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110407d
1-6
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





GWM120-0075X1 pdf, ピン配列
www.DataSheet.co.kr
GWM 120-0075X1
Straight Leads GWM 120-0075X1-SL
37,5 +0,20
(11x) 3 ±0,05
1,5 1 ±0,05
5 ±0,05
1 ±0,05
0,5 ±0,02
4,5 12 ±0,05
4 ±0,05
(3x) 6 ±0,05
Surface Mount Device
37,5 +0,20
(11x) 3 ±0,05
1,5 1 ±0,05
GWM 120-0075X1-SMD
5 ±0,05
0,5 ±0,02
R1 ±0,2
4,5 12 ±0,05
4 ±0,05
(3x) 6 ±0,05
1 ±0,05
5 ±0,10
5° ±2°
Leads
Straight
SMD
Ordering
Standard
Standard
Part Name &
Packing Unit Marking
GWM 120-0075X1 - SL
GWM 120-0075X1 - SMD
Part Marking
GWM 120-0075X1
GWM 120-0075X1
Delivering Mode
Blister
Blister
Base Qty.
28
28
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Ordering
Code
505 960
505 581
20110407d
3-6
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


GWM120-0075X1 電子部品, 半導体
www.DataSheet.co.kr
70
VR = 30 V
TVJ = 125°C
65
60
125 A
80A
55
40 A
50
400 600 800 1000 1200
-diF /dt [A/µs]
Fig. 13 Reverse recovery time trr
of the body diode vs. di/dt
1400
1.6
1.4
VR = 30 V
TVJ = 125°C
1.2
125 A
80A
1.0 40 A
0.8
0.6
0.4
400 600 800 1000 1200
-diF/dt [A/µs]
Fig. 15 Reverse recovery charge Qrr
of the body diode vs. di/dt
1400
VGS
0.1 VGS
VIDDS 0.9 ID
0.1 ID
td(on) tr
0.9 VGS
t
0.9 ID
td(off)
0.1 ID t
tf
Fig. 17 Definition of switching times
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
GWM 120-0075X1
50
45
VR = 30 V
TVJ = 125°C
40
125 A
80 A
35 40 A
30
25
20
15
10
200 400 600 800 1000 1200
-diF/dt [A/µs]
Fig. 14 Reverse recovery current IRM
of the body diode vs. di/dt
1400
250
200
150
100
TJ = -25°C
25°C
50 125°C
150°C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD [V]
Fig. 16 Source current IS vs.
source drain voltage VSD (body diode)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
GWM 120-0075X1
10
100
1000
10000
Time [ms]
Fig. 18 Typ. therm. impedance junction
to heatsink ZthJC
20110407d
6-6
Datasheet pdf - http://www.DataSheet4U.net/

6 Page



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部品番号部品説明メーカ
GWM120-0075X1

Three phase full Bridge

IXYS Corporation
IXYS Corporation


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