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VFT3045CBP の電気的特性と機能

VFT3045CBPのメーカーはVishayです、この部品の機能は「Trench MOS Barrier Schottky Rectifier Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VFT3045CBP
部品説明 Trench MOS Barrier Schottky Rectifier Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VFT3045CBP Datasheet, VFT3045CBP PDF,ピン配置, 機能
www.DataSheet.co.kr
New Product
VFT3045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5.0 A
TMBS ®
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
123
VFT3045CBP
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
PIN 1
PIN 3
PIN 2
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
45 V
IFSM
200 A
VF at IF = 15 A
0.39 V
TOP max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV) (1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Isolation voltage from termal to heatsink, t = 1 min
Operating junction and storage temperature range
Junction temperature in DC forward current
without reverse bias, t 1 h
VAC
TOP, TSTG
TJ (2)
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
VFT3045CBP
45
30
15
200
1500
- 40 to + 150
200
UNIT
V
A
A
V
°C
°C
Document Number: 89369 For technical questions within your region, please contact one of the following:
Revision: 27-Oct-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





VFT3045CBP pdf, ピン配列
www.DataSheet.co.kr
New Product
VFT3045CBP
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Voltage (V)
0.7
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100 000
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
10
Junction to Case
1
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
PIN
123
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Document Number: 89369 For technical questions within your region, please contact one of the following:
Revision: 27-Oct-10
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/


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部品番号部品説明メーカ
VFT3045CBP

Trench MOS Barrier Schottky Rectifier Rectifier

Vishay
Vishay


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