|
|
2SC3116のメーカーはSanyo Semicon Deviceです、この部品の機能は「PNP/NPN Epitaxial Planar Silicon Transistors」です。 |
部品番号 | 2SC3116 |
| |
部品説明 | PNP/NPN Epitaxial Planar Silicon Transistors | ||
メーカ | Sanyo Semicon Device | ||
ロゴ | |||
このページの下部にプレビューと2SC3116ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Ordering number:ENN1032B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1248/2SC3116
160V/700mA Switching Applications
Uses
· Color TV sound output, converters, inverters.
Features
· High breakdown voltage.
· Large current capacity.
· Using MBIT process
Package Dimensions
unit:mm
2009B
[2SA1248/2SC3116]
8.0
4.0
2.7
1.6
0.8
0.8
0.6
3.0
0.5
( ) : 2SA1248
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pc
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)120V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE1
hFE2
VCE=(–)5V, IC=(–)100mA
VCE=(–)5V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)50mA
* : 2SA1248/2SC3116 are classified by follows according to hFE at 100mA.
Rank
R
S
T
hFE 100 to 200 140 to 280 200 to 400
12 3
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Ratings
(–)180
(–)160
(–)6
(–)0.7
(–)1.5
1
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
(–)1.0 µA
(–)1.0 µA
100*
400*
90
120 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/5137KI/D222KI, TS No.1032-1/4
1 Page 2SA1248/2SC3116
IC -- VBE
VCE(sat) -- IC
1000
10
VCE=5V
IC / IB=10
5
800 3
2
600
400
200
For PNP, minus sign is
omitted.
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR03057
hFE -- IC
1000
7 2SA1248
5 Pulse
3
2
1.0
5
3
2
2SA1248
0.1 2SC3116
5
3 For PNP, minus sign is omitted.
2
3 5 7 10
2 3 5 7 100 2 3
Collector Current, IC – mA
hFE -- IC
1000
7
5
5 7 1000 2
ITR03058
2SC3116
Pulse
3
2
100
7
5
3
2
10
7
5
3
3 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 2
Collector Current, IC – mA
ITR03059
fT -- IC
5
2SA1248
3
2
VCE=5V
10V
100
7
5
100
7
5
3
2
10
7
5
3
3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2
Collector Current, IC – mA
ITR03060
5 fT -- IC
2SC3116
3
2 VCE=10V
5V
100
7
5
33
22
10 5 7 --10
100
7
5
23
5 7 --100
23
Collector Current, IC – mA
Cob -- VCB
5 7 --1000
ITR03061
f=1MHz
3
2
10 2SA1248
7
5
2SC3116
3
2
For PNP, minus sign is omitted.
1.0
1.0
23
5 7 10
23
5 7 100
2
Collector-to-Base Voltage, VCB -- V ITR03063
10 5 7 10
3
2
23
5 7 100
23
Collector Current, IC – mA
ASO
5 7 1000
ITR03062
2SA1248 / 2SC3116
1.0
5
3
2
0.1
5
3
DC operDatCioonpTear=at2io5n°C
2
0.01
5
3 For PNP, minus sign is omitted.
2
1.0 2 3 5 7 10 2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE – V ITR03064
No.1032-3/4
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ 2SC3116 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SC3110 | Silicon Power Transistor | Inchange |
2SC3112 | TRANSISTOR (FOR AUDIO AMPLIFIER AND SWITCHING APPLICATIONS) | Toshiba Semiconductor |
2SC3113 | Silicon NPN Epitaxial Type TRANSISTOR | Toshiba Semiconductor |
2SC3114 | High-VEBO/AF Amp Applications | Sanyo Semicon Device |