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2SC3114 の電気的特性と機能

2SC3114のメーカーはSanyo Semicon Deviceです、この部品の機能は「High-VEBO/AF Amp Applications」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SC3114
部品説明 High-VEBO/AF Amp Applications
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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2SC3114 Datasheet, 2SC3114 PDF,ピン配置, 機能
Ordering number:ENN1047C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246/2SC3114
www.datasheet4u.com
High-VEBO, AF Amp Applications
Features
· High VEBO.
· Wide ASO and highly resistant to breakdown.
Package Dimensions
unit:mm
2003B
[2SA1246/2SC3114]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
( ) : 2SA1246
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)10V, IC=0
DC Current Gain
hFE VCE=(–)6V, IC=(–)1mA
Gain-Bandwidth Product
fT VCE=(–)6V, IC=(–)1mA
Common base Output Capacitance
Cob VCB=(–)6V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)50mA, IB=(–)5mA
* : The 2SA1246/2SC3114 are classified as follows according to hFE at 1mA.
Rank
R
S
T
U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
123
1.3 1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Ratings
(–)60
(–)50
(–)15
(–)150
(–)300
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
min
100*
Ratings
typ
max
Unit
(–)0.1 µA
(–)0.1 µA
560*
100 MHz
(4.2)3.0
pF
(–)0.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/3257AT/8253KI, TS (KOTO) No.1047-1/4

1 Page





2SC3114 pdf, ピン配列
1000
7
5
3
2
www.datasheet4u.com
100
7
5
3
2
--0.1 2
1000
7
5
3
2
hFE -- IC
2SA1246/2SC3114
2SA1246
VCE=--6V
Pulse
1000
7
5
3
2
5 --1.0 2
5 --10 2
Collector Current, IC – mA
fT -- IC
5 --100 2
ITR03044
2SA1246
VCE=--6V
Pulse
100
7
5
3
2
0.1 2
1000
7
5
3
2
hFE -- IC
2SC3114
VCE=6V
Pulse
5 1.0 2
5 10 2
Collector Current, IC – mA
fT -- IC
5 100 2
ITR03045
2SC3114
VCE=6V
Pulse
100
7
5
3
2
100
7
5
3
2
10 7 --1.0
3
2
2 3 5 7 --10
2 3 5 7 --100 2
Collector Current, IC – mA
ITR03046
Cob -- VCB
2SA1246
f=1MHz
10 7 1.0
3
2
2 3 5 7 10
23
5 7 100
2
Collector Current, IC – mA
ITR03047
Cob -- VCB
2SC3114
f=1MHz
10 10
77
55
33
22
1.0
5 7 --1.0
2 3 5 7 --10
2 3 5 7 --100
Collector-to-Base Voltage, VCB -- V ITR03048
VCE(sat) -- IC
3
2SA1246
2 IC / IB=10
--10
7
5
3
2
--0.1
7
5
3
--1.0
2 3 5 7 --10
23
5 7 --100
2
Collector Current, IC – mA
ITR03050
1.0
5 7 1.0
2 3 5 7 10
2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR03049
VCE(sat) -- IC
3
2SC3114
2 IC / IB=10
1.0
7
5
3
2
0.1
7
5
3
1.0
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC – mA
ITR03051
No.1047-3/4


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共有リンク

Link :


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Toshiba Semiconductor
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2SC3113

Silicon NPN Epitaxial Type TRANSISTOR

Toshiba Semiconductor
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2SC3114

High-VEBO/AF Amp Applications

Sanyo Semicon Device
Sanyo Semicon Device


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