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2SC3076 の電気的特性と機能

2SC3076のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon NPN Epitaxial Type TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SC3076
部品説明 Silicon NPN Epitaxial Type TRANSISTOR
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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2SC3076 Datasheet, 2SC3076 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications
Power Switching Applications
2SC3076
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
Excellent switching time: tstg = 1.0 μs (typ.)
Complementary to 2SA1241
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
50
50
5
2
1
1.0
10
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7J1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-02-05

1 Page





2SC3076 pdf, ピン配列
1.2
1.0
IB = 5 mA
0.8
VCE – IC
Common emitter
Tc = 25°C
10 20
0.6
0.4
30
40
0.2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current IC (A)
1.2
1.0
IB = 5 mA
10
0.8
VCE – IC
Common emitter
Tc = 55°C
20 30
0.6
0.4 40
50
0.2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current IC (A)
2SC3076
VCE – IC
1.2
Common emitter
1.0 Tc = 100°C
0.8 IB = 5 mA
0.6
10
20
0.4
30
40
0.2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current IC (A)
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = 2 V
Tc = 100°C
25
55
10
0.01
0.03 0.05 0.1
0.3 0.5
Collector current IC (A)
1
2
VCE (sat) – IC
1
Common emitter
0.5 IC/IB = 20
0.3
0.1
0.05
0.03
0.01
0.01
Tc = 100°C
25
55
0.03 0.05 0.1
0.3 0.5
Collector current IC (A)
1
2
VBE (sat) – IC
10
Common emitter
5 IC/IB = 20
3
1 Tc = 55°C
0.5
25
0.3
100
0.1
0.01
0.03 0.05 0.1
0.3 0.5
Collector current IC (A)
1
2
3 2010-02-05


3Pages





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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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