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PDF VSSB3L6S Data sheet ( Hoja de datos )

Número de pieza VSSB3L6S
Descripción Surface Mount Trench MOS Barrier Schottky Rectifier
Fabricantes Vishay 
Logotipo Vishay Logotipo



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New Product
VSSB3L6S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS®
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
60 V
IFSM
80 A
VF at IF = 3.0 A
0.42 V
TJ max.
150 °C
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
Notes
(1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB
(2) Free air, mounted on recommended copper pad area
VSSB3L6S
3L6
60
3.0
2.6
80
10 000
- 55 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89347 For technical questions within your region, please contact one of the following:
Revision: 18-Oct-10
www.vishay.com
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