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VSSB310 の電気的特性と機能

VSSB310のメーカーはVishayです、この部品の機能は「Surface Mount Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VSSB310
部品説明 Surface Mount Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VSSB310 Datasheet, VSSB310 PDF,ピン配置, 機能
www.DataSheet.co.kr
New Product
VSSB310
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS®
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
100 V
IFSM
80 A
EAS 50 mJ
VF at IF = 3.0 A
0.56 V
TJ max.
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C
Operating junction and storage temperature range
EAS
IRRM
TJ, TSTG
Notes
(1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 P.C.B.
(2) Free air, mounted on recommended copper pad area
VSSB310
V3B
100
3.0
1.9
80
50
1.0
- 40 to + 150
UNIT
V
A
A
mJ
A
°C
Document Number: 89139
Revision: 25-Aug-09
For technical questions within your region, please contact one of the following:
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





VSSB310 pdf, ピン配列
www.DataSheet.co.kr
New Product
VSSB310
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
10 TA = 150 °C
1 TA = 125 °C
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1000
Junction to Ambient
100
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.085 (2.159)
MAX.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.220 REF.
Document Number: 89139
Revision: 25-Aug-09
For technical questions within your region, please contact one of the following:
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/


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部品番号部品説明メーカ
VSSB310

Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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